AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Dallaeva, Dinara; Ţălu, Ștefan; Stach, Sebastian; Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír

doi:10.1016/j.apsusc.2014.05.086

Cited by 94 publications

(66 citation statements)

References 19 publications

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“…2.0000 ± 0.0001 2.0000 ± 0.0001 2.0000 ± 0.0001 2.0000 ± 0.0001 f 1 1.9976 ± 0.0010 1.9227 ± 0.0154 1.9110 ± 0.0057 1.9032 ± 0.0060 f 2 1.9878 ± 0. In all AFM images, it can be seen that due to the grow process, the 3-D surface of the samples are covered by nanoasperities with different distributions of asperity height and density, and with different shapes of asperity apex (Fig.…”

Section: Discussionmentioning

confidence: 99%

“…New materials and/or new thin film deposition technologies are broadly used in technological applications in microelectronics, optoelectronics, biomedical engineering and microsystems [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…TiN coatings are generally prepared by PVD (Physical Vapor Deposition) techniques. Direct-current (DC) magnetron sputtering is one of the dominant methods for thin film fabrication, that can be applied also for the preparation of TiN thin films [2,[10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Multifractal characteristics of titanium nitride thin films

Ţălu

Stach

Valedbagi

et al. 2015

Materials Science-Poland

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The study presents a multi-scale microstructural characterization of three-dimensional (3-D) micro-textured surface of titanium nitride (TiN) thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM) analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions D q and the singularity spectrum f(α). Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Multifractal characteristics of titanium nitride thin films

Ţălu

Stach

Valedbagi

et al. 2015

Materials Science-Poland

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“…The fractal geometry allows extraction of highly distinctive features from 3-D geometric patterns of surfaces, as compared with traditional statistical parameters [9][10][11][12][13][14][15]. The fractal analyses allow an easy realization, certainty and fast time of calculation [15][16][17][18].…”

Section: Fractal Approach To Surface Characterizationmentioning

confidence: 99%

Multifractal characterization of epitaxial silicon carbide on silicon

Ţălu

Stach

Ramazanov

et al. 2017

Materials Science-Poland

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The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro-and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro-and nanoelectronic applications.

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“…The choice of wide band gap semiconductors such as AlN for power electronics is obvious due to stability to extreme conditions of exploitation, to localization of electric and magnetic fields, local heating etc. [1,2].…”

Section: Introductionmentioning

confidence: 99%

Micromorphology of AlN Epilayers on Sapphire Substrates

Ţălu¹,

Sobola²,

Tománek³

et al. 2017

dtcse

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Abstract. The purpose of this paper was to describe the 3D nano-scaled surface topography of the aluminum nitride on sapphire. The structures were prepared by magnetron sputtering with heating of the sapphire substrate. The dependence of the layers topography on the substrate temperature was presented. Surface appearance was studied by atomic force microscopy (AFM). The quantitative topography data from AFM were used for surface characterization by fractal analysis and statistical parameters. The results of fractal analysis show the correlation of fractal dimension and statistical characteristics of surface topography. The data may contribute to manufacture of AlN thin films with desired surface characteristics.

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AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Cited by 94 publications

References 19 publications

Multifractal characteristics of titanium nitride thin films

Multifractal characteristics of titanium nitride thin films

Multifractal characterization of epitaxial silicon carbide on silicon

Micromorphology of AlN Epilayers on Sapphire Substrates

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