Metal
nanowires (NWs) are promising transparent conducting electrode
(TCE) materials because of their excellent optoelectrical performance,
intrinsic mechanical flexibility, and large-scale processability.
However, the surface roughness, thermal/chemical instability, and
limited electrical conductivity associated with empty spaces between
metal NWs are problems that are yet to be solved. Here, we report
a highly reliable and robust composite TCE/substrate all-in-one platform
that consists of crystalline indium tin oxide (c-ITO) top layer and
surface-embedded metal NW (c-ITO/AgNW-GFRH) films for flexible optoelectronics.
The c-ITO top layer (thickness: 10–30 nm) greatly improves
the electrical performance of a AgNW-based electrode, retaining its
transparency even after a high-temperature annealing process at 250
°C because of its thermally stable basal substrate (i.e., AgNW-GFRH).
By introducing c-ITO thin film, we achieve an extremely smooth surface
(R
rms < 1 nm), excellent optoelectrical
performance, superior thermal (> 250 °C)/chemical stability
(in
sulfur-contained solution), and outstanding mechanical flexibility
(bending radius = 1 mm). As a demonstration, we fabricate flexible
organic devices (organic photovoltaic and organic light-emitting diode)
on c-ITO/AgNW-GFRH films that show device performance comparable to
that of references ITO/glass substrates and superior mechanical flexibility.
With excellent stability and demonstrations, we expect that the c-ITO/AgNW-GFRHs
can be used as flexible TCE/substrate films for future thin-film optoelectronics.