Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

Ortega, J.J.; Ortiz-Hernandez, Arturo Agustin; Berumen-Torres, J.A.; Galindo, R. Escobar; Méndez-García, V.H.; Araiza, J. J.

doi:10.1016/j.matlet.2016.06.005

Cited by 14 publications

(5 citation statements)

References 23 publications

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“…[123] Groups Ia (Li, Na, K) and Ib (Cu, Ag, Au) have also been selected for p-type doping in ZnO. [60,72,73,98,99,[124][125][126][127][128] The DFT calculation suggested that Li, Na, and K impurities give rise to shallower acceptor levels than the group V impurities, especially P, As, and Sb. [99] There are some reports on the p-type ZnO:Li.…”

Section: P-doping In Znomentioning

confidence: 99%

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

Xiao

et al. 2017

Chinese Phys. B

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P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper, we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

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Section: P-doping In Znomentioning

confidence: 99%

“…[131] In order to increase the hole density, some groups used the double-acceptor co-doping method, that is, Li-N or Ag-N double-acceptor doping, to realize the p-type ZnO. [73,125] However, there is no sufficient increase in hole density with this method.…”

Section: P-doping In Znomentioning

confidence: 99%

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

Xiao

et al. 2017

Chinese Phys. B

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“…Similarly, there are new reports using the technique of deposition by assisted ion implantation [21], the sol-gel and spin coating methods [22,23] and sputtering method [24]. At the same time, theoretical investigations suggest that Ag and N are the two best candidates for the production of p-type ZnO, taking into account the effects of deformation and substitution energy levels of Ag-Zn and N-O [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Avelar Muñoz,

Gómez Rosales,

Ortiz Hernández

et al. 2024

Preprint

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide and achieving that the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to10^{−3} Ω.cm, Hall mobility of tens cm2/V.s and a hole concentration from 10^{17} to 10^{19} cm^{−3}. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

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“…At the same time, theoretical investigations suggest that Ag and N are the two best candidates for the production of p-type ZnO, taking into account the effects of deformation and substitution energy levels of Ag-Zn and N-O [ 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

Avelar-Muñoz,

Gómez-Rosales,

Ortiz-Hernández

et al. 2024

Micromachines

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10−3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm−3. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

show abstract

Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

Cited by 14 publications

References 23 publications

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

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Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

Cited by 14 publications

References 23 publications

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn 3 N 2 precursors

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn ₃ N ₂ precursors