Ageing of metal-semiconductor field effect transistors

Abstract

The ageing effect in silicon metal-semiconductor field effect transistors is studied by taking into account the reaction of the gate contact with the native layer on the silicon surface. Specifically, the effect of ageing on the threshold voltage and drain characteristics has been studied. It is shown that the change in the threshold voltage with time is quite significant until it becomes nearly constant after a considerably long time. The drain current-voltage characteristics of the device also show appreciable drift with time. It is also shown that, depending on the values of the interface parameters and doping, the device may make a transition from the normally on to a normally off state after prolong ageing. An expression for the critical time required to make such a transition in silicon devices is derived.

Low-field mobility spectrum in nonparabolic compound semiconductors

“…For microwave and optoelectronic applications of new materials, the estimation of highfrequency behaviour of their kinetic coefficients is of mandatory importance. In the case of low-field mobility, this estimate can be performed by iterative techniques [8]. However, from the computational point of view, a drawback of this technique is that all calculations must be repeated for each frequency value.…”

The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor

“…Metal-semiconductor field effect transistors (MESFETs) have been the subject of a number of investigations in the past [1][2][3][4][5][6][7][8]. These devices seem to be attractive not only for their various circuit applications, but also for their potential applications such as optical field effect transistors (OPFETs) [9].…”