AgGaS2- and Al-doped GaSe Crystals for IR Applications

Zhang, Ying-Fei; Wang, Rong; Kang, Zhi‐Hui; Jiang, Yun; Gao, Jigang; Andreev, Yu. M.; Ланский, Г. В.; Кох, К. А.; Morozov, Alexander; Shaiduko, A. V.; Zuev, V. S.

doi:10.1016/j.optcom.2010.11.067

Cited by 38 publications

(23 citation statements)

References 22 publications

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“…The absorption coefficient decreased to 0.03-0.06 cm 21 in the mid-IR and 1 cm 21 in the THz range for optimally doped crystals. Optimal doping concentrations were established as 2-3 mass.% of S in GaSe 55,61 , 0.5-1 mass.% of In 69 , 0.07-0.38 mass.% of Te 49,61 , 0.01-0.02 mass % of Al 36,42 , and 0.5 mass.% of Er 12 , by charge composition. Optimally doped crystals also have 2-3 times lower absorption coefficients compared to that for undoped GaSe; down to 0.2 cm 21 in the THz range.…”

Section: Discussionmentioning

confidence: 99%

“…The accuracy of modern facilities for composition determination, such as Inductively Coupled Plasma -Optical Emission Spectrometers (ICP-OES) iCAP 6500, Thermo Scientific, were found to be inadequate to determine the presence of low solubility dopants, such as Ag, Al, or Er 36,[42][43][44] , in quantities that, though small, may still greatly influence the physical properties of the crystals. Thus, these current techniques do not allow for establishment of the dependence of optical quality of doped GaSe on the Ag, Al, or Er contents.…”

Section: Crystal Characterizationmentioning

confidence: 99%

“…Surprisingly, doping with Al leads to an extremely large, from five to seven orders of magnitude, decrease in the free charge carrier concentration. In turn, doping with Al leads to a large shift of the plasma frequency toward the long wave, as well a decrease of the plasma absorption coefficient 36,42 . As a result of the negative input of the plasma, the dielectric response of GaSe in the THz range significantly decreases, and the ordinary refractive index grows markedly (Figure 11b), as well as birefringence (Figure 12a).…”

Section: Mid-ir Properties Of Al- Er- and Ag-doped Crystalsmentioning

confidence: 99%

“…Bearing in mind the low Er solubility 21 , the increase appears to be due largely to the improved optical quality. It was established properly that the maximal transparency window 42,49,55,61,69 and THz range 51 absorption coefficients for all properly doped crystals grown by the modified method, i.e., with a rotating heat field, are 2-3 times lower (f0.03-0.06 cm 21 ) than those for crystals grown by the conventional vertical Bridgman method. These data are confirmed by the increased frequency conversion efficiency.…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

“…Further doping decreases the optical quality, indicating that there exists an optimal doping level. Measurement by the proposed method, i.e., outside of maximal transparency range 49 , allows us to determine the optimal doping concentrations as:2-3 mass.% of S in GaSe 55,61 , 0.5-1 mass.% of In 69 , 0.07-0.38 mass.% of Te 49,61 , 0.01-0.02 mass.% of Al 36,42 , and 0.5 mass.% of Er 12 , by charge composition. In all cases, the optimal doping concentration was again confirmed experimentally by direct comparison of frequency conversion efficiency in pure and doped crystals at a fixed pump intensity.…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Discussionmentioning

confidence: 99%

Section: Crystal Characterizationmentioning

confidence: 99%

Section: Mid-ir Properties Of Al- Er- and Ag-doped Crystalsmentioning

confidence: 99%

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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Large Crystal Growth and New Crystal Exploration of Mid-Infrared Second-Order Nonlinear Optical Materials

Jiang

Guo

Zeng

et al. 2012

Structure and Bonding

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Mono and digallium selenide clusters as potential superhalogens

2015

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We present a systematic theoretical study on mono and digallium selenide clusters, Ga(m)Se(n) (m = 1, 2 and n = 1-4), along with their negatively and positively charged counterparts. Different theoretical methods, namely density functional theory (DFT), second-order Møller-Plesset perturbation theory (MP2) and coupled cluster singles and doubles, including non-iterative triples [CCSD(T)], were employed in conjunction with the 6-311+G(2df) basis set. The lowest-energy configurations of gallium selenides prefer to be planar, with the exception of cationic GaSe4 and Ga2Se4. The adiabatic electron affinities (AEA) of Ga(m)Se(n) (m = 1, 2 and n = 1-4) clusters range from 1.07 to 3.78 eV, and their adiabatic ionization potentials (AIP) vary from 7.57 to 8.76 eV using the CCSD(T)//B3LYP level of theory. It was found that the AEAs of gallium selenides do not depend solely on the electrophilicity of the clusters but also on their electronic structures. No significant trend was observed in the AIP values and HOMO-LUMO (H-L) gaps with increase in cluster size of the mono and digallium selenide series. Among the dissociation channels, the decomposition of GaSe4 → GaSe2 + Se2 was found to be thermodynamically most favored. Furthermore, the AEAs of GaSe2, GaSe3, GaSe4 and Ga2Se4 were found to exceed that of the chlorine atom and are therefore termed as 'superhalogens'. Finally, the AEAs of the Ga2X(n) (X = O-Se; n = 2-4) series were found to be almost similar.

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AgGaS2- and Al-doped GaSe Crystals for IR Applications

Cited by 38 publications

References 22 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Large Crystal Growth and New Crystal Exploration of Mid-Infrared Second-Order Nonlinear Optical Materials

Mono and digallium selenide clusters as potential superhalogens

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