Aging effect on photoluminescence of p-type porous silicon

Abstract

Visible photoluminescence (PL) in anodized porous Si (PS) at room temperature has opened the way to realize different types of quantum electronics devices based on silicon technology. Such devices require a strong PL intensity and a controlled shift of the PL peak on the energy scale. Porous silicon is produced by electrochemical etching of either p-or n-type crystalline silicon. illumination is one ofthe most complicated parameters in PS formation, because it changes the properties of microporous as well as macroporous layers. It is necessary to illuminate the wafer during the anodization in order to create the holes required by the chemical reaction to form the PS. In this paper we present the results of the effects of illumination level during fabrication on the PL properties of p-type PS and it time degradation dynamics.

Influence of alkali metallization (Li, Na and K) on photoluminescence properties of porous silicon

“…Similar to this study, an efficient and blue shifted luminescence was achieved from the oxidized PS surfaces [2,14,15]. Effects of the aging of the PS in air were observed in [16]. Kanemitsu et al [17] have studied the PL spectra and dynamics of the surface-oxidized Si nanocrystals [17] and their results suggest that PL from oxide related interface states is very important.…”