2018
DOI: 10.1149/osf.io/3fvqn
|View full text |Cite
Preprint
|
Sign up to set email alerts
|

#AiMES2018_20181002_1400_Low-T-SiGe_Porret

Abstract: As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal budgets to preserve the integrity of devices already present on the chips. We present our latest developments on low-temperature epitaxial growth processes, ranging from c… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
6
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
3
1

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(6 citation statements)
references
References 19 publications
0
6
0
Order By: Relevance
“…The B concentration follows a very similar trend for the CDE and epi samples, which can be considered to be fully matching within the error bars of the B levels determined by SIMS. As discussed previously, exceeding a B‐doping level of ≈2 × 10 20 cm −3 causes a significant shift of the Ge:B X‐ray diffraction (XRD) peak due to the contraction of the Ge lattice. This can ultimately lead to material degradation.…”
Section: Resultsmentioning
confidence: 83%
See 2 more Smart Citations
“…The B concentration follows a very similar trend for the CDE and epi samples, which can be considered to be fully matching within the error bars of the B levels determined by SIMS. As discussed previously, exceeding a B‐doping level of ≈2 × 10 20 cm −3 causes a significant shift of the Ge:B X‐ray diffraction (XRD) peak due to the contraction of the Ge lattice. This can ultimately lead to material degradation.…”
Section: Resultsmentioning
confidence: 83%
“…For a maximum efficiency, we keep the process isothermal and isobaric, i.e., the deposition and etch steps are conducted at the same temperature and pressure. By doing so, we could confirm the full selectivity of the process toward oxide and nitride surfaces, achieved within‐wafer nonuniformities below 1%, and applied the conditions to devices with improved performance . In the following section, we will focus on the properties and peculiarities of the grown materials to provide a thorough understanding of dopant incorporation mechanisms occurring during the CVD of Ge:B.…”
Section: Process Descriptionmentioning
confidence: 99%
See 1 more Smart Citation
“…In an early contribution, 31) Ge:Ga was successfully grown with flat Ga profiles and active doping levels exceeding 1×10 20 cm −3 (resistivity < 0.4 mΩ.cm). However, keeping Ga diluted in the Ge matrix and avoiding clustering was identified as a challenge.…”
Section: Physical Properties Of the Grown Ge:ga Epi Layersmentioning
confidence: 99%
“…Using Cyclic Deposition / Etch schemes enabled, thanks to the deposition of a reduced thickness and the selective etch of defects at the end of each cycle, to recover flat Si surfaces even at low temperatures [23][24]. The same strategy, with HCl (+ H2) [16] or Cl2 (+ N2 or He) [25][26] as etchant gases, could be used here to have flat GeSi films at temperatures less than 400°C with the current growth data points. Adding HCl to Ge2H6, SiH2Cl2 and/or Si2H6 might also help in recovering flat surfaces.…”
Section: -Gesi Surface Morphologymentioning
confidence: 99%