Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction

Prawoto, Clarissa; Ma, Zichao; Xiao, Ying; Raju, Salahuddin; Chan, Mansun

doi:10.1109/ted.2021.3105086

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2023

Publication Types

Select...

Article3

Other2

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

(1 citation statement)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A method often employed to reduce the crosstalk is fabricating air gaps using trenches, which decrease the stray capacitance between the tracks (e.g., gate electrodes) [22,23]. This can be understood as due to a reduced dielectric constant of the vacuum gap with respect to the silicon substrate.…”

Section: Resultsmentioning

confidence: 99%

Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk

Tomari

Yoneda

Kodera

2023

IEICE Trans. Electron.

View full text Add to dashboard Cite

Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flipchip bonding.

show abstract

Section: Resultsmentioning

confidence: 99%