Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Rai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P.; Roy, Anupam; Ghosh, Rohit; Sonde, Sushant; Kang, Sangwoo; Chang, Jiwon; Trivedi, Tanuj; Dey, Rik; Guchhait, Samaresh; Larentis, Stefano; Register, Leonard F.; Tutuc, Emanuel; Banerjee, S.

doi:10.1021/acs.nanolett.5b00314

Cited by 185 publications

(176 citation statements)

References 51 publications

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“…The hole carrier density of the bare MoTe 2 transistor was determined as 2.09 × 10 11 cm −2 , whereas the electron density of the Al 2 O 3 ‐inserted MoTe 2 transistor was 1.21 × 10 12 cm −2 . The obtained electron carrier density in Al 2 O 3 inserted MoTe 2 was similar to that of the carrier density reported in other methods, such as chemical (BV) and amorphous titanium suboxide (ATO) oxide doping …”

Section: Resultssupporting

confidence: 85%

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Park

Katiyar

Hoang

et al. 2019

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To realize basic electronic units such as complementary metal‐oxide‐semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p‐ and n‐type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron‐charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition (CVD)‐grown 2H‐MoTe2 is utilized to tune the doping from p‐ to n‐type. Moreover, a type‐controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n‐type MoTe2 transistor from the p‐channel exhibits a maximum on‐state current of 10 µA, with a higher electron mobility of 8.9 cm2 V−1 s−1 at a drain voltage (Vds) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD‐grown 2H‐MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide‐based efficient and ultrafast electronic units with high‐density circuit components under a low‐dimensional regime.

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Section: Resultssupporting

confidence: 85%

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Park

Katiyar

Hoang

et al. 2019

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“…This high performance is achieved by (i) suppressing the interfacial carrier scattering with (3-aminopropyl)triethoxysilane (APTES) treatment and (ii) improving the source-side contact resistance through a triphenylphosphine (PPh 3 )-based n-doping technique. [ 40,41 ] This n-doping effect by the PPh 3 was also confi rmed in the MoS 2 samples, as shown in Figure 1 c,d. Then, the PPh 3 n-doping phenomenon is investigated in detail on ReSe 2and MoS 2 -based devices, in terms of the electronic (threshold voltage, fi eld-effect mobility, and carrier concentration) and optoelectronic (photoresponsivity and temporal photo response) device performances.…”

supporting

confidence: 66%

“…For the Raman analysis, we prepared ten different samples and measured at three different points in each sample. [ 40,41 ] This n-doping effect by the PPh 3 was also confi rmed in the MoS 2 samples, as shown in Figure 1 c,d. [ 37 ] Because of the low symmetry from the distorted triclinic structure, [ 38 ] there were many Raman peaks between 100 and 300 cm −1 ( Figure S1, Supporting Information), but precise E 2g and A 1g peaks were not observed unlike other conventional TMDs such as MoS 2 and WSe 2 .…”

supporting

confidence: 66%

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Park

Kang

et al. 2016

Advanced Materials

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The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm).

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“…The difference in surface charge transfer doping between oxygen-deficient HfO 2−x and stoichiometric Al 2 O 3+x has been observed and well quantified in literature. [16][17][18] The elemental composition and chemical stoichiometry of atomic layer deposition (ALD) alumina were investigated by x-ray photoelectron spectroscopy (XPS), as shown in Figure S6. The chemical composition of the Al 2 O x was quantified using the Casa XPS software, in which x was found to be about 3.1.…”

Section: Resultsmentioning

confidence: 99%

Embedded gate CVD MoS2 microwave FETs

et al. 2017

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Recent studies have increased the cut off frequencies achievable by exfoliated MoS 2 by employing a combination of channel length scaling and geometry modification. However, for industrial scale applications, the mechanical cleavage process is not scalable but, thus far, the same device improvements have not been realized on chemical vapor deposited MoS 2 . Here we use a gate-first process flow with an embedded gate geometry to fabricate short channel chemical vapor deposited MoS 2 radio frequency transistors with a notable f T of 20 GHz and f max of 11.4 GHz, and the largest high-field saturation velocity, v sat = 1.88 × 10 6 cm/s, in MoS 2 reported so far. The gate-first approach, facilitated by cm-scale chemical vapor deposited MoS 2 , offers enhancement mode operation, I ON /I OFF ratio of 10 8 , and a transconductance (g m ) of 70 μS/μm. The intrinsic f T (f max ) obtained here is 3X (2X) greater than previously reported top-gated chemical vapor deposited MoS 2 radio frequency field-effect transistors. With as-measured S-parameters, we demonstrate the design of a GHz MoS 2 -based radio frequency amplifier. This amplifier has gain greater then 15 dB at 1.2 GHz, input return loss > 10 dB, bandwidth > 200 MHz, and DC power consumption of~10 mW.

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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Cited by 185 publications

References 51 publications

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Embedded gate CVD MoS2 microwave FETs

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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Cited by 185 publications

References 51 publications

Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Embedded gate CVD MoS2 microwave FETs

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Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits