Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Do Hyung; Shim, Jaewoo; Jeon, Jae Heung; Choi, Sang‐Hoon; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin‐Hong

doi:10.1002/adma.201601248

Cited by 75 publications

(64 citation statements)

References 57 publications

(76 reference statements)

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“…Here, the selenium vacancies serving as traps in ReSe 2 seem to possess considerably shorter recombination and generation times for carriers than the sulfur vacancies in ReS 2 . This result agrees well with previous studies on vdW photodetectors, in which considerably shorter photoresponses were confirmed in selenide‐based devices compared to sulfide‐based devices 7, 31. Additionally, we investigated the stability of the photodetectors with respect to the repetitive photoswitching cycle (Figure S4, Supporting Information).…”

Section: Resultssupporting

confidence: 90%

“…In addition, the other important optoelectronic parameters,38, 39, 40 such as detectivity and external quantum efficiency, were also extracted from the photodetectors fabricated on the ReS 2 , ReSe 2 , and ReS 2 /ReSe 2 heterojunctions; the plotted data is provided in the Supporting Information chapter (Figure S5, Supporting Information). Finally, for performance comparison of the gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector with other devices, we plotted the photoresponsivity values obtained in this study and previous studies for vdW photodetectors4, 5, 6, 7, 8, 9, 10, 11, 13, 23, 41, 42, 43 in Figure 4k. Our gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector (blue dotted line) exhibited relatively high photoresponsivity values over a broad range of wavelengths, compared to other vdW photodetectors.…”

Section: Resultsmentioning

confidence: 96%

“…Since the graphene photodetector was first implemented in 2009,1 various van der Waals (vdW) materials, such as graphene,1, 2, 3, 4 transition metal dichalcogenides (TMDs),5, 6, 7, 8, 9, 10, 11, 12 and black phosphorus (BP),13, 14, 15 have been utilized to achieve high‐performance photodetectors with high photoresponsivity and a wide detection range. In the early graphene‐based photodetectors, photodetection in a wide range from ultraviolet to terahertz wavelengths was possible, owing to the zero‐bandgap nature of graphene 16.…”

Section: Introductionmentioning

confidence: 99%

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Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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In recent years, various van der Waals (vdW) materials have been used in implementing high‐performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near‐infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS2 and ReSe2 is demonstrated. In addition, by applying the gate‐control function to the two‐terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 105 A W−1 at λ = 980 nm and 1.58 × 105 A W−1 at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high‐performance IR photodetectors.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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“…Here, Φ tip was obtained from the sum of the HOPG work function ( Φ HOPG ) and Δ V CPD between the KPFM tip and the HOPG surface ( Φ tip = Φ HOPG +Δ V CPD_HOPG ), which is presented in more detail in Supplementary Fig. 2 (refs 40, 41). Therefore, the work function values of the BP and ReS 2 films can be estimated to be about 4.5 and 5.1 eV, respectively (Fig.…”

Section: Resultsmentioning

confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

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“…Most photodetectors were modulated by the applied gate voltage and temperature 85, 176, 177, 178, 188. However, other tuning methods, such as by intercalation or atmosphere, can also enhance the physical properties of the host materials to enhance the optoelectronic performance 14.…”

Section: Applications For 2d Optoelectronic and Electronic Devicesmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Cited by 75 publications

References 57 publications

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

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