Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Abstract

With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

Two‐dimensional heterostructure promoted infrared photodetection devices

“…Second, new 2D materials/family with ultranarrow bandgaps with high optical absorption are urgent to be discovered. 62,[119][120][121][122] Complementally, exploring the optimal modification of the energy band and electronic properties in existing 2D family is essential. Through which we can settle the misalignment, modulating barrier height and carrier density via surface doping.…”

Emerging in‐plane anisotropic two‐dimensional materials

“…Although many works have reported the device applications of FETs and photodetectors based on these low‐symmetrical 2D materials, they do not stress the in‐plane anisotropic properties. In fact, the recent progress of electronic and optoelectronic applications based on 2D materials have been well reviewed . Here, we only review the device applications based on the utilization of intrinsic in‐plane anisotropic properties of this category of 2D materials.…”

“…In fact, the recent progress of electronic and optoelectronic applications based on 2D materials have been well reviewed. [134][135][136] Here, we only review the device applications based on the utilization of intrinsic in-plane anisotropic properties of this category of 2D materials.…”

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

“…Similar to graphene, TMDCs have many excellent properties, such as good mechanical flexibility and thermal stability, and have been widely used in optical and electrical devices . Although TMDCs have a lower mobility than graphene, they have higher optical absorptivity and a tunable bandgap due to the different number of layers.…”

“…Similar to graphene, TMDCs have many excellent properties, such as good mechanical flexibility and thermal stability, and have been widely used in optical and electrical devices. [76][77][78][79][80][81][82][83][84][85] Although TMDCs have a lower mobility than graphene, they have higher optical absorptivity and a tunable bandgap due to the different number of layers. As a typical 2D layered TMDC, molybdenum disulfide (MoS 2 ) can be integrated with Si into a heterostructure with desirable performance.…”