Al diffused conductive ZnSe substrates grown by physical vapor transport method

Namikawa, Yasuo; Fujiwara, Shinsuke; Kotani, Takenori

doi:10.1016/s0022-0248(01)01100-9

Cited by 8 publications

(8 citation statements)

References 14 publications

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“…On the other hand, the diffusion coefficient decreases when the Al concentration is lower than 10 18 cm -3 , indicating that the diffusion coefficients are concentration-dependent, and it becomes nearly constant again at the Al concentration region below 10 17 cm -3 . In the Al diffused ZnSe crystal, similar concentration-dependent diffusion coefficient was reported previously [8]. According to the paper [8], the diffusion coefficients are small constant value at Al concentration of below 4 × 10 17 cm -3 , and increases with the increase of Al concentration ranging from 4 × 10 17 to 2 × 10 18 cm -3…”

Section: Resultssupporting

confidence: 83%

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Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Tanaka

Murata

Saito

et al. 2007

Physica Status Solidi (b)

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The thermal diffusion of Al in ZnTe has been studied by using secondary ion mass spectroscopy. The relationships between the diffusion coefficient and the Al concentration were determined from Al depth profiles by a Boltzmann -Matano analysis. The diffusion coefficient depends on the Al concentration and it becomes large at the high doping level, probably due to the increase of Zn vacancy concentration attributed to the self-compensation effect. As a result of decrease in the diffusion coefficient at low Al concentration, a rapid decrease in the Al concentration was observed at the diffusion front. This would lead to the formation of highly abrupt p -n junctions, resulting in the fabrication of ZnTe light emitting diode with better performance.

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Section: Resultssupporting

confidence: 83%

“…In the Al diffused ZnSe crystal, similar concentration-dependent diffusion coefficient was reported previously [8]. According to the paper [8], the diffusion coefficients are small constant value at Al concentration of below 4 × 10 17 cm -3 , and increases with the increase of Al concentration ranging from 4 × 10 17 to 2 × 10 18 cm -3…”

Section: Resultssupporting

confidence: 83%

Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Tanaka

Murata

Saito

et al. 2007

Physica Status Solidi (b)

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“…Наблюдаемые в легированных областях полос люминесценции 540−630 нм можно объяснить люминесценцией на образующихся в процессе диффузии алюминия ПДЦ. В ряде работ [4,[19][20][21]25,26] отмечалось, что в результате диффузии алюминия в ZnSe образуется целый ряд комплексов алюминия с остаточными примесями и собственными дефектами. Так, сходные с регистрируемыми в данной работе линии наблюдались в работах [15,21].…”

Section: результаты экспериментовunclassified

“…В работе [19] исследовалось с помощью SIMS пространственное распределение алюминия в ZnSe в результате его диффузии при температуре 950 • С в атмосфере газообразного цинка. Было обнаружено, что диффузия алюминия в этот материал может носить сложный характер.…”

Section: обсуждение результатовunclassified

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

Калинушкин¹,

Гладилин²,

Уваров³

et al. 2021

Физика И Техника Полупроводников

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Spatial distribution of luminescence characteristics of CVD-ZnSe doped with Aluminum and both Aluminum and Iron by thermal diffusion were studied. The diffusion method leads to formation of two areas in crystal volume: (1) area with high aluminum concentration in which the luminescence of defective-impurity centers (DICs) dominates and exciton luminescence is absent and (2) area with low aluminum concentration in which exciton luminescence dominates. The border of two areas recognized on luminescence map is sharp that not corresponded to diffusion nature. The result is explained by assuming the anomalous nature of aluminum diffusion, leading to a sharp change in the aluminum concentration at a certain distance from the doping surface. Method of aluminum doping process applied in present paper leaded to weakens of well-known luminescence suppression effect by iron ions in ZnSe.

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“…The preparation of high-quality ZnSe single crystals is crucial to promote the practical application of this material. Chemical vapor transport (CVT) technique [5][6][7][8] is preferable to obtain perfect single crystals at low temperature comparing to other methods, such as Bridgman method [9][10][11], physical vapor transport (PVT) [12][13][14] and solid state recrystallization (SSR) [15,16].…”

Section: Introductionmentioning

confidence: 99%

Mass flux of ZnSe–N–H–Cl chemical vapor transport (CVT) system

Wang

2010

Journal of Crystal Growth

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Al diffused conductive ZnSe substrates grown by physical vapor transport method

Cited by 8 publications

References 14 publications

Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

Mass flux of ZnSe–N–H–Cl chemical vapor transport (CVT) system

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