Al-Ge(aluminum-germanium)

Okamoto, H.

doi:10.1007/bf02652170

Cited by 14 publications

(9 citation statements)

References 5 publications

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“…aluminum nitride and germanium nitride. [11][12][13][14] In contrast to the Ti-Ge-N system, where Ti-Ge alloys exist at room temperature, no Al-Ge phases are known. 12,13 In the following a short literature review of the relevant phases is given.…”

Section: Introductionmentioning

confidence: 99%

Nanocomposite Al–Ge–N thin films and their mechanical and optical properties

2012

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Coatings of the Al-Ge-N system were synthesized using reactive DC magnetron sputtering and characterized to determine their structure and properties, as well as their potential usage as hard optical coatings. Coatings were analyzed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and both scanning and transmission electron microscopy. Besides the binary reference samples (AlN and Ge 3 N 4 ), ternary samples with Ge contents from 5 to 28 at% were produced and found to be either a solid solution phase of nanocrystalline (Al 1Àx Ge x )N, or nanocomposites of this phase and an amorphous Ge 3 N 4Ày phase. The grain size of the (Al 1Àx Ge x )N phase decreases with increasing Ge content, from about 30 to about 15 nm. The (Al 1Àx Ge x )N phase was found to exhibit two different textures: at low Ge content a (001) preferred orientation was observed, while at higher Ge content the (110) orientation became dominant. The Ge 3 N 4Ày phase was found to be highly susceptible to sputter damage during sputter-cleaning prior to XPS analysis. Ternary coatings were found to have a hardness between 18 and 24 GPa. The optical absorption edge was found to be tunable through variation of Ge content, and ranged from 260 to 350 nm, corresponding to an optical bandgap (E 04 ) of 4.7 to 3.5 eV. Also the index of refraction (n) shows a slight dependence of Ge content, increasing from about 2.0 to 2.3. Thus these coatings have a potential use as protective coatings for optical components operating in the visual or near-IR range, and possibly as UV-blocking filters with a tunable absorption edge.

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Section: Introductionmentioning

confidence: 99%

Nanocomposite Al–Ge–N thin films and their mechanical and optical properties

2012

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“…3b, into Al forming thus an alloy (which also doesn't give absorption contrast) with Al atomic concentration of 98.9% and Ge atomic concentration 1.1% according to the Al-Ge phase diagram. 20,21 The Ge reaction with the polycrystalline Al creates the roughness at the Al 2 O 3 /Al interface during the FG annealing because the Ge diffusivity in Al depends on the crystallographic orientation of the Al grains.…”

Section: Structural Characteristics: Experimental Results and Discussionmentioning

confidence: 99%

“…According to the Ge-Al phase diagram, Ge diffuses into Al forming an alloy. 20,21 The Al also must diffuse into the alumina resulting in the small reduction (∼0.4 nm on the average) of the alumina thickness. The high interface roughness after FGA is attributed mainly to Ge diffusion.…”

Section: Structural Characteristics: Experimental Results and Discussionmentioning

confidence: 99%

Post-metallization annealing and photolithography effects in p-type Ge/Al₂O₃/Al MOS structures

Ioannou‐Sougleridis¹,

Alafakis²,

Pécz³

et al. 2022

ECS J. Solid State Sci. Technol.

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In this work, the combined effect of negative tone photolithography and post-metallization annealing (PMA) on the electrical behavior of Al/Al2O3/p-Ge MOS structures are investigated. During photoresist development, the exposed upper part of the Al2O3 film weakens due to the reaction with the developer. Subsequent processes of Al deposition and PMA at 350°C result in alumina thickness reduction. The gate electrode formation seems to involve at least three processes: a) germanium substrate out-diffusion and accumulation at the top of the alumina layer that takes place during the alumina deposition, b) alumina destabilization, and c) germanium diffusion into the deposited Al metal and Al diffusion into the alumina. The overall effect is the reduction of the alumina thickness due to its partial consumption. It is shown that the germanium diffusion depends on the annealing duration, and not on the annealing ambient (inert or forming gas). Although PMA passivates interface traps near the valence band edge, the insulating properties of the stacks are degraded. This degradation appears as a low-level ac loss, attributed to a hopping current that flows through the Al2O3 layer. The results are discussed and compared to recently reported on Pt/Al2O3/p-Ge structures formed and treated under the same conditions.

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“…Single crystals of ErAl 2 Ge 2 were grown by the high temperature solution growth method, taking advantage of the deep eutectic (420 • C) formed by the Al:Ge (72:28) [12]. High purity metals of Er, Al and Ge with a starting composition of 1 : 17.5 : 7.5 were placed in a high quality recrystallized alumina crucible.…”

Section: Experimental Methodsmentioning

confidence: 99%

Anisotropic magnetic properties of trigonal ErAl₂Ge₂ single crystal

Nandi¹,

Thamizhavel²,

Dhar³

2020

J. Phys.: Condens. Matter

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We report the anisotropic magnetic properties of the ternary compound ErAl 2 Ge 2 . Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray diffraction we confirmed that ErAl 2 Ge 2 crystallizes in the trigonal CaAl 2 Si 2 -type crystal structure. The anisotropic magnetic properties of a single crystal were investigated by measuring the magnetic susceptibility, magnetization, heat capacity and electrical resistivity. A bulk magnetic ordering occurs around 4 K inferred from the magnetic susceptibility and the heat capacity. The magnetization measured along the ab-plane increases more rapidly than along the c-axis suggesting the basal ab-plane as the easy plane of magnetization. The magnetic susceptibility, magnetization and the 4f -derived part of the heat capacity in the paramagnetic regime analysed based on the point charge model of the crystalline electric field (CEF) indicate a relatively low CEF energy level splitting.arXiv:1911.07589v1 [cond-mat.str-el] 18 Nov 2019Anisotropic magnetic properties of trigonal ErAl 2 Ge 2 single crystal

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Al-Ge(aluminum-germanium)

Cited by 14 publications

References 5 publications

Nanocomposite Al–Ge–N thin films and their mechanical and optical properties

Nanocomposite Al–Ge–N thin films and their mechanical and optical properties

Post-metallization annealing and photolithography effects in p-type Ge/Al₂O₃/Al MOS structures

Anisotropic magnetic properties of trigonal ErAl₂Ge₂ single crystal

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Al-Ge(aluminum-germanium)

Cited by 14 publications

References 5 publications

Nanocomposite Al–Ge–N thin films and their mechanical and optical properties

Nanocomposite Al–Ge–N thin films and their mechanical and optical properties

Post-metallization annealing and photolithography effects in p-type Ge/Al2O3/Al MOS structures

Anisotropic magnetic properties of trigonal ErAl2Ge2 single crystal

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Post-metallization annealing and photolithography effects in p-type Ge/Al₂O₃/Al MOS structures

Anisotropic magnetic properties of trigonal ErAl₂Ge₂ single crystal