Al-Induced Crystallization of Amorphous Silicon Film

Abstract

Al-induced crystallization (AIC) method was used for obtaining polycrystalline silicon (poly-Si) film on glass substrate. The films with glass/a-Si:H/Al structure were fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and magnetic sputtering. Then the samples were sent to perform annealing treatments during the different temperatures and time. The experimental results demonstrate that a highly crystallized poly-Si sample can be achieved by annealing at 480°C for 2h. The crystalline fraction (Xc) of the sample is about 99.1% and the Full Width at Half Maximum (FWHM) is 4.89cm-1. The average grain size of this sample is about 250nm. The energy dispersive spectroscopy (EDS) measurement confirms that the residual Al in the film is very little.