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Al-induced crystallization (AIC) method was used for obtaining polycrystalline silicon (poly-Si) film on glass substrate. The films with glass/a-Si:H/Al structure were fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and magnetic sputtering. Then the samples were sent to perform annealing treatments during the different temperatures and time. The experimental results demonstrate that a highly crystallized poly-Si sample can be achieved by annealing at 480°C for 2h. The crystalline fraction (Xc) of the sample is about 99.1% and the Full Width at Half Maximum (FWHM) is 4.89cm-1. The average grain size of this sample is about 250nm. The energy dispersive spectroscopy (EDS) measurement confirms that the residual Al in the film is very little.

Polycrystalline Si (poly-Si) thin films for application to display devices and solar cell are generally fabricated by crystallizing amorphous Si (a-Si) thin film precursors. In this paper, studies on Ni-induced lateral crystallization of a-Si thin films by microwave annealing at low temperature were reported. The crystallization of a-Si thin films was enhanced by applying microwaves to the films. The poly-Si films were invested by Optical Microscopy, X-ray Diffraction (XRD) , Raman Spectroscopy and Scanning Electron Microscope(SEM). After processing of Ni-induced lateral crystallization by microwave annealing above 500°C, the a-Si has begun to be crystallized with large grains having the main (111) orientation. The rate of crystallization at 550°C is about 0.033μm/min. Compared to Ni-induced lateral crystallization by conventional furnace annealing, Ni-induced lateral crystallization by microwave annealing both lowers the crystallization temperature and reduces the time of crystallization. The crystallization mechanism during microwave annealing was also studied. The technique that combines Ni-induced lateral crystallization with microwave annealing has potential applications in thin-film transistors (TFT’s) and solar cell.

The existing studies on the planning of charging facilities generally neglect the influence of terrain characteristics. First, this study quantifies the transportation characteristics based on the relative height to calculate the travel energy consumption of electric vehicles (EVs) users. Then, the charging demand of EVs is estimated and assigned according to urban traffic flow. Finally, a land purchasing coefficient is proposed based on a functional agglomeration phenomenon. The coefficient is integrated into formulating a planning model with the objective of minimising the total annual social costs. Numerical experiments are conducted to validate the novel planning method. The experimental results verify that the terrain characteristics increase users’ travel energy consumption and limit their driving range.