Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD

Sumiyoshi, Kazuhide; Tsukihara, Masashi; Kataoka, Keita; Kawamichi, S.; Okimoto, Tadashi; Nishino, Katsushi; Naoi, Yoshiki; Sakai, Shiro

doi:10.1016/j.jcrysgro.2006.10.031

Cited by 1 publication

(2 citation statements)

References 11 publications

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“…Conventional nitride-based UV-LEDs were grown on c-plane sapphire and emitted unpolarized light. 27,28) Although the polarized emission characteristics of nonpolar or semipolar GaN-based LEDs were reported, [9][10][11][12] the power of emission was low owing to the poor quality of the nonpolar or semipolar film grown by heteroepitaxy using r-plane sapphire, compared with that from a LED grown on c-plane sapphire. Recently, another method used to control the polarization using photonic crystals has also been applied to 470 nm emission from GaN-based LEDs.…”

Section: Introductionmentioning

confidence: 99%

“…One of the candidate devices for resolving the issue for integration, high polarization, and high transmittance is the device using a high-contrast dielectric subwavelength grating (SWG). [16][17][18][19][20][21][22][23][24][25][26][27][28] In the SWG, the pitch of the grating is shorter than the incident wavelength. The Bloch-like eigenmodes within the SWG region resulting from the spatial periodicity of the refractive index distribution interact with the incident light.…”

Section: Introductionmentioning

confidence: 99%

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Polarized emission characteristics of UV-LED with subwavelength grating

Takashima

Shimizu

Haraguchi

et al. 2014

Jpn. J. Appl. Phys.

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We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as s-polarization: p-polarization = 4:1 at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire.

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