2003
DOI: 10.1016/j.solmat.2003.08.006
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Al2O3-coated nanoporous TiO2 electrode for solid-state dye-sensitized solar cell

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Cited by 92 publications
(39 citation statements)
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“…Our results are consistent with several reports of increased V OC and decreased J SC for Al 2 O 3 -coated nanocrystalline SnO 2 and TiO 2 electrodes, [35][36][37] but at odds with other studies that find enhanced V OC , J SC , and fill factor for TiO 2 films with solgel-type Al 2 O 3 overlayers. 29, 38 Authors of one of the latter papers established that alumina shells retard the recombination dynamics of nanocrystalline TiO 2 by passivating surface recombination centers and slowing the rate of interfacial charge transfer.…”
Section: Resultssupporting
confidence: 92%
“…Our results are consistent with several reports of increased V OC and decreased J SC for Al 2 O 3 -coated nanocrystalline SnO 2 and TiO 2 electrodes, [35][36][37] but at odds with other studies that find enhanced V OC , J SC , and fill factor for TiO 2 films with solgel-type Al 2 O 3 overlayers. 29, 38 Authors of one of the latter papers established that alumina shells retard the recombination dynamics of nanocrystalline TiO 2 by passivating surface recombination centers and slowing the rate of interfacial charge transfer.…”
Section: Resultssupporting
confidence: 92%
“…11 Previously, dip-coating methods were employed to coat tunneling layers onto the nanoporous TiO 2 electrode [12][13][14] (i.e., Al 2 O 3 , MgO, SiO 2 ); however, control of the film growth through this technique is problematic, and comparatively thick films are required to ensure complete coverage. Here, we address the importance of the inorganic/organic * To whom correspondence should be addressed.…”
Section: Introductionmentioning
confidence: 99%
“…8, a cell containing a 0.33-nm thick Al 2 O 3 layer exhibited a higher fill factor and V oc than a 0.19-nm thick Al 2 O 3 layer, but its J sc became lower since the electron injection was exponentially dependent on the thickness of the insulating layer (Zhang et al, 2003). 17) As an extreme condition, a very thick MgO layer improved the V oc of a CuIbased cell up to 800 mV, with negligible J sc observed. The above discussion shows that the insulating layer in principle can increase the V oc of the cell greatly through suppressing recombination, but the problem is how to keep the J sc from decreasing at the same time.…”
Section: )mentioning
confidence: 99%