(AlCrTaTiZr)N/(AlCrTaTiZr)N0.7 bilayer structure of high resistance to the interdiffusion of Cu and Si at 900 °C

Chang, Shou-Yi; Chen, Dao-Sheng

doi:10.1016/j.matchemphys.2010.09.016

Cited by 15 publications

(2 citation statements)

References 19 publications

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“…Ta and W films play the role of diffusion barriers against Cu at 600 • C in H 2 for 1 h [11], which is attributed to their high melting temperatures and immiscibility with Cu [7,12]. Amorphous binary and ternary nitrides (TaN x [7,13], WN x [14,15], Ta-W-N [16], and W-Ti-N [17]) have been used to raise the barrier temperatures to 600-800 • C. High-entropy alloy nitride films, such as (AlMoNbSiTaTiVZr) 50 N 50 [10], (AlCrTaTiZr)N [18], and (AlCrTaTiZrMo)N [19], with amorphous structures and large lattice distortions, have been applied as diffusion barriers [20]. The phase transformation of the aforementioned nitride films at elevated temperatures affected the performance of diffusion barriers.…”

Section: Introductionmentioning

confidence: 99%

Diffusion Barrier Characteristics of WSiN Films

Chen

Yeh

et al. 2022

Coatings

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WSiN films were produced through hybrid pulse direct current/radio frequency magnetron co-sputtering and evaluated as diffusion barriers for Cu metallization. The Cu/WSiN/Si assemblies were annealed for 1 h in a vacuum at 500–900 °C. The structural stability and diffusion barrier performance of the WSiN films were explored through X-ray diffraction, Auger electron spectroscopy, and sheet resistance measurement. The results indicated that the Si content of WSiN films increased from 0 to 9 at.% as the power applied to the Si target was increased from 0 to 150 W. The as-deposited W76N24, W68Si0N32, and W63Si4N33 films formed a face-centered cubic W2N phase, whereas the as-deposited W59Si9N32 film was near-amorphous. The lattice constants of crystalline WSiN films decreased after annealing. The sheet resistance of crystalline WSiN films exhibited a sharp increase as they were annealed at 800 °C, accompanied by the formation of a Cu3Si compound. The failure of the near-amorphous W59Si9N32 barrier against Cu diffusion was observed when annealed at 900 °C.

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Section: Introductionmentioning

confidence: 99%

Diffusion Barrier Characteristics of WSiN Films

Chen

Yeh

et al. 2022

Coatings

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“…In recent years, HEA coatings have been widely investigated, which could be obtained by chemical vapour deposition, 6 plasma-transferred arc cladding, 7,8 thermal sprayed, 9 laser-cladding 10-14 and direct current magnetron sputtering (DCMS). 15-18 Moreover, HEA coatings have been proposed for the good application prospect as protective coatings, 19-22 wear-resistant materials, 23 corrosion-resistant materials, 24 oxidation resistance, 16 slurry erosion resistance 14 and coatings in communication devices.…”

Section: Introductionmentioning

confidence: 99%

Coatings of FeAlCoCuNiV high entropy alloy

Dou

Zheng

et al. 2016

Surface Engineering

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The coatings of FeAlCoCuNiV high entropy alloy were deposited by direct current magnetron sputtering. The microstructure and the mechanical and the electrochemical properties of the coatings are investigated. The coatings exhibit single FCC solid solution. The thickness of the coatings increases with the increasing deposited time. The hardness and Young's modulus of the coatings are 19.7 and 189 GPa, respectively. All coatings exhibit better electrochemical corrosion resistance than the 201 stainless steel in acidic alkali and salt corrosion mediums.

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