ALD Precursor Development: Challenges, Opportunities and Managing Uncertainty

Abstract

The challenges associated with producing next generation subnanometer films to meet conformality requirements on complex topographies and to improve semiconductor device performance characteristics have resulted in the consideration of a myriad of new materials, methods of deposition, and integration strategies.For many applications it has become apparent that atomic layer deposition (ALD) will become the method of choice for depositing films. Adoption of this technology is well underway for applications with aggressive architectures such as DRAM capacitors and electrodes, and it appears imminent for copper interconnect cladding applications. The time will soon come when every semiconductor device has at least one film that is generated by ALD.During the talk, an example of how Praxair has approached precursor development for interconnect barrier and seed applications will be illustrated, and how we have used a diverse series of learnings during development to benefit the ALD community at large.

Molecular Dynamics Simulation of Scattering and Surface Diffusion of Oxygen Molecules on Ionomers in Catalyst Layers of PEFCs

“…The polymer used has a molecular weight of 1144. The temperature is kept constant by the Nosé-Hoover method (11). The cut-off distance for the Lennard-Jones and Coulomb potentials is set to 12 Å.…”

Atomic layer deposition of metal and metal chalcogenide thin films and nanolaminate composites.

“…The change from CVD to ALD behaviour is mainly obtained by the exchange of ligands or shift in metal oxidation state, retaining volatility and stability. [28] In literature, ALD precursors are categorized by their ligands in the displayed five groups (figure 1.5) ranging from highly symmetric early arrangements, like pure el-ements, metal-halides or beta-diketonates to novel true organometallic or nitrogen containing antisymmetric metal organyls.…”