ALD prepared silver nanowire/ZnO thin film for ultraviolet detectors

Li, Zhenfeng; Li, Zihan; Shi, Zhiyuan; Zhu, Pengyu; Wang, Zixu; Zhang, Jia; Li, Yang; He, Peng; Zhang, Shuye

doi:10.1016/j.mtcomm.2023.106974

Cited by 2 publications

(1 citation statement)

References 48 publications

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“…Zinc oxide (ZnO) stands out as a highly promising material with multifaceted applications in microelectronics and optoelectronics [1][2][3]. The material's alluring combination of optical and electrical properties has positioned it at the forefront of technological advancements, finding utility in an array of applications ranging from solid-state emission and electroluminescent devices [4] to piezoelectric transducers [5], transparent electrodes [6], photo-catalysts [7], chemical sensors [8], and solar cells [9]. Despite its well-established prowess in these diverse domains, ZnO has, until recently, encountered a lack of consideration as a dosimetric material.…”

Section: Introductionmentioning

confidence: 99%

Thermoluminescence dose response and kinetic parameters of Gd-doped ZnO nanoparticles

Isik,

Yildirim,

Guner

et al. 2024

Phys. Scr.

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This study investigates the thermoluminescence (TL) properties of undoped and gadolinium (Gd)-doped zinc oxide (ZnO) nanoparticles synthesized via sol-gel method. The crystal structure of both synthesized nanoparticles was determined as hexagonal from x-ray diffraction pattern. The TL curve of undoped ZnO nanoparticles reveals two distinct peaks at 400.5 and 479.2 K, each associated with trap centers featuring activation energies of 0.84 and 1.05 eV. TL curve of the Gd:ZnO introduced three peaks associated with trap centers at 1.10, 1.18, and 1.25 eV. Notably, the absence of the 0.84 eV trap center in Gd-doped ZnO implies a modification in the defect structure. Considering the effect of Gd-doping on the band structure and potential minor errors in the analysis results, it was stated that the traps at 1.05 and 1.10 eV levels belonged to the same defect center. Dose-dependent investigations for undoped and Gd-doped ZnO nanoparticles reveal linear behaviors in the TL response, highlighting their potential for dosimetric applications. Photoluminescence spectra of both compounds exhibited emission peaks around 455 and 577 nm, which were associated with native defect centers.

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Section: Introductionmentioning

confidence: 99%

Thermoluminescence dose response and kinetic parameters of Gd-doped ZnO nanoparticles

Isik,

Yildirim,

Guner

et al. 2024

Phys. Scr.

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Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering

Liu,

Huang,

Lin

et al. 2024

Materials

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Sn-doped Ga2O3 thin films and metal–semiconductor–metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 1018 cm−3, 1.60 × 10−4 Ω·cm, and 45.05 cm3/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of tr = 31 s and tf = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W.

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ALD prepared silver nanowire/ZnO thin film for ultraviolet detectors

Cited by 2 publications

References 48 publications

Thermoluminescence dose response and kinetic parameters of Gd-doped ZnO nanoparticles

Thermoluminescence dose response and kinetic parameters of Gd-doped ZnO nanoparticles

Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering

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