ALD TaN from PDMAT in TSV Architectures

Brizé, Virginie; Artaud, Laurent; Berthomé, G.; Boichot, R.; Danièle, S.; Nuta, Ioana; Mantoux, A.; Blanquet, Elisabeth

doi:10.1149/1.3485255

Cited by 4 publications

(9 citation statements)

References 15 publications

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“…PDMAT was supplied in a standard stainless steel bubbler provided by Air Products heated up at a temperature of 343 K. PDMAT vapor was carried into the reactor by high purity argon (H 2 O < 0.5 ppm, O 2 < 0.1 ppm, C n H m < 0.1 ppm). The ALD experimental conditions (pulse time, flow rate, temperature) have been optimized, using in situ microgravimetry study (19). The deposition was investigated in the temperature range of 370-525 K. It was confirmed that films deposited from PDMAT and NH 3 contain a high level of oxygen (above 10%) and a lower level of "free" carbon impurities as already reported (5,6,9,(19)(20)(21).…”

Section: Methodssupporting

confidence: 55%

“…To evaluate ECS Transactions, 33 (2) 321-332 (2010) the use of an additional reducing agent, H 2 gaseous flow was added either during the PDMAT pulse, or during the NH 3 pulse. It was found that H 2 addition in the PDMAT pulse improves the films quality in terms of oxygen contamination while oxygen contamination increases when H 2 is introduced during the NH 3 pulse (19). In both cases, the ALD regime is degraded (19).…”

Section: Methodsmentioning

confidence: 98%

“…It was found that H 2 addition in the PDMAT pulse improves the films quality in terms of oxygen contamination while oxygen contamination increases when H 2 is introduced during the NH 3 pulse (19). In both cases, the ALD regime is degraded (19).…”

Section: Methodsmentioning

confidence: 98%

“…TaN films -actually TaN(O,C) films -were deposited on SiO 2 (800 nm)/Si wafers using a hot-wall quartz ALD reactor operated under a pressure around 100 Pa (19). PDMAT and ammonia were used as precursors.…”

Section: Methodsmentioning

confidence: 99%

“…The ALD experimental conditions (pulse time, flow rate, temperature) have been optimized, using in situ microgravimetry study (19). The deposition was investigated in the temperature range of 370-525 K. It was confirmed that films deposited from PDMAT and NH 3 contain a high level of oxygen (above 10%) and a lower level of "free" carbon impurities as already reported (5,6,9,(19)(20)(21). To evaluate ECS Transactions, 33 (2) 321-332 (2010) the use of an additional reducing agent, H 2 gaseous flow was added either during the PDMAT pulse, or during the NH 3 pulse.…”

Section: Methodsmentioning

confidence: 99%

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(Invited) Developments of ALD Processes: Experiments and Thermodynamic Evaluations

et al. 2010

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The most commonly use for gaseous precursors in CVD and ALD processes are organometallic molecules. These ones are generally thermally unstable at low temperatures (100 - 300{degree sign}C) and requires an understanding of its gas-phase chemical behavior. The thermal cracking of the gaseous precursor PDMAT has been studied by Mass Spectrometry. Ta[N(CH3)2]5(g), Ta[N(CH3)2]4(g), N(CH3)2(g) together with TaO[N(CH3)2]4(g) have been found to be the main molecules observed in the vapor phase originated from the PDMAT vaporization. The thermodynamic data of the O-free molecules have been evaluated from literature and statistical calculations. Comparison between experiments and thermodynamic simulations performed at different temperatures and pressures, evidenced kinetic limitations in the decomposition processes: ligand rupture and ligand decomposition. Furthermore, the experimental gas-phase study confirms the presence of oxygen containing molecules in the PDMAT cracking gaseous phase which explains the presence of oxygen in the deposited ALD TaN films. Thermodynamic simulations were also used to evaluate the use of hydrogen addition to the process.

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Section: Methodssupporting

confidence: 55%

Section: Methodsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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(Invited) Developments of ALD Processes: Experiments and Thermodynamic Evaluations

et al. 2010

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Developments of TaN ALD Process for 3D Conformal Coatings

Brizé

Prieur

Violet

et al. 2011

Chemical Vapor Deposition

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International audienceThere is a growing interest in producing tantalum nitride (TaN) thin films for various industrial applications. For example, in microelectronics, the development of IC technology is driven by the need to increase both performance and functionality while reducing power and cost. This goal can be achieved by several solutions among which the introduction of architecture enhancements such as 3D integration. The most challenging step is the deposition of a conformal, continuous, and adherent diffusion barrier. In this work, atomic layer deposition (ALD) of TaN thin films is explored using the combination between the thermodynamical behavior of the precursor, mass transfer in the reactor, and the operating conditions. TaN thin film deposition on very complex shape substrates, such as nanodots, TSV, silicon nanowires, and carbon nanotubes, has been evaluated

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Characterization of vapor draw vessel performance for low-volatility solid precursor delivery

Maslar

Kimes

Sperling

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Low volatility precursors are widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Compared to gases and high volatility liquid precursors, delivery of low volatility liquid and solid precursors can be problematic, with solid precursors being particularly so. To investigate some of these delivery issues, the performance of a vapor draw vessel was characterized for the delivery of pentakis(dimethylamido) tantalum (PDMAT), a low-volatility solid precursor at preferable delivery temperatures, for reduced-pressure cyclical CVD and ALD processes. Vessel characterization involved determining (1) a source efficiency as a function of process conditions and (2) the degree of PDMAT decomposition as a function of temperature and vessel idle time. The PDMAT partial pressure, flow rate, and mass per injection used to determine the source efficiency were determined from measurements obtained using a custom-designed non-dispersive infrared gas analyzer. For a series of injections after an idle/purge sufficiently long to saturate the vessel head space, the source efficiency decreased from a maximum slightly less than unity for the first injection until a consistent value was reached that was approximately one half to one third of the maximum value. A comparable trend was observed for mass delivered per injection. For the conditions used in this investigation, the source efficiency decreased when the injection time was increased to longer than 1 s, when pressure was decreased, and when the carrier gas flow rate was increased. Although the corresponding mass per injection increased with these changes, the increase in mass was less than that predicted had the carrier gas been saturated. The source efficiency did not depend strongly on temperature and only moderately on vessel idle durations (4–16 s). The degree of PDMAT decomposition was evaluated by measuring the partial pressure of dimethylamine (the primary PDMAT decomposition product under the conditions of this investigation) using the same gas analyzer. For a given idle time, the amount of dimethylamine delivered more than doubled as vessel temperature was increased from 68 to 78 °C.

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ALD TaN from PDMAT in TSV Architectures

Cited by 4 publications

References 15 publications

(Invited) Developments of ALD Processes: Experiments and Thermodynamic Evaluations

(Invited) Developments of ALD Processes: Experiments and Thermodynamic Evaluations

Developments of TaN ALD Process for 3D Conformal Coatings

Characterization of vapor draw vessel performance for low-volatility solid precursor delivery

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