ALD Technology - Present and Future Challenges

Haukka, Suvi

doi:10.1149/1.2721470

Cited by 22 publications

(11 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The substrate size was limited by the research‐scale equipment used in this work. Commercial ALD equipment exists for coating 12″ wafers or even larger substrates as well as batches of over 100 wafers, which allow further upscaling of the present process. The as‐deposited SnS 2 films were amorphous, and crystallized upon annealing forming smooth, continuous films with the expected layered SnS 2 structure (Figure c,d) …”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

Small

View full text Add to dashboard Cite

Semiconducting 2D materials, such as SnS , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS films has remained a great challenge. Herein, continuous wafer-scale 2D SnS films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.

show abstract

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Mattinen

King

Khriachtchev

et al. 2018

Small

View full text Add to dashboard Cite

show abstract

“…In some cases, there may be channels into the surface, but the aspect ratio of these channels-the ratio of the channel depth to width-is rarely greater than 100 [39,40]. The desired films are also reasonably thick, usually greater than 2 nm and often up to 20 nm [39,40]. For an ALD film growth rate of 0.04 nm/cycle, even a 2-nm film would require 50 cycles, whereas a 20-nm film would require 500 cycles.…”

Section: Design Considerations For Semiconductor Applicationsmentioning

confidence: 99%

“…The flow rates of the carrier gas are typically in the order of 100 mL/min to 200 mL/min, corresponding to linear gas velocities of 2.5 m/s to 10 m/s across the substrate [41,42]. The precursor and ligand-removal reagents can be inserted into the carrier stream as short pulses typically of 0.5-s duration [39], and passed over the sample by convection. Due to the high flow velocities, back mixing is negligible.…”

Section: Design Considerations For Semiconductor Applicationsmentioning

confidence: 99%

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

et al. 2018

View full text Add to dashboard Cite

Atomic layer deposition (ALD) offers exciting possibilities for controlling the structure and composition of surfaces on the atomic scale in heterogeneous catalysts and solid oxide fuel cell (SOFC) electrodes. However, while ALD procedures and equipment are well developed for applications involving flat surfaces, the conditions required for ALD in porous materials with a large surface area need to be very different. The materials (e.g., rare earths and other functional oxides) that are of interest for catalytic applications will also be different. For flat surfaces, rapid cycling, enabled by high carrier-gas flow rates, is necessary in order to rapidly grow thicker films. By contrast, ALD films in porous materials rarely need to be more than 1 nm thick. The elimination of diffusion gradients, efficient use of precursors, and ligand removal with less reactive precursors are the major factors that need to be controlled. In this review, criteria will be outlined for the successful use of ALD in porous materials. Examples of opportunities for using ALD to modify heterogeneous catalysts and SOFC electrodes will be given.

show abstract

“…Jackson et al have attempted to combine the methods discussed above for the deposition of AlF3 by using TMA and TaF5 as precursors [145]. This approach is somewhat questionable, as it has been reported that combining TMA with metal halides generally leads to metal carbide deposition [178][179][180]. In addition, a similar ligand exchange reaction between TMA and TaF5, as was depicted in Equation (2), should produce pentamethyl tantalum which has been reported to be unstable [181,182].…”

Section: Ald Of Metal Fluorides Using Metal Fluorides As the Fluorinementioning

confidence: 99%

Metal Fluorides as Lithium-Ion Battery Materials: An Atomic Layer Deposition Perspective

2018

View full text Add to dashboard Cite

Lithium-ion batteries are the enabling technology for a variety of modern day devices, including cell phones, laptops and electric vehicles. To answer the energy and voltage demands of future applications, further materials engineering of the battery components is necessary. To that end, metal fluorides could provide interesting new conversion cathode and solid electrolyte materials for future batteries. To be applicable in thin film batteries, metal fluorides should be deposited with a method providing a high level of control over uniformity and conformality on various substrate materials and geometries. Atomic layer deposition (ALD), a method widely used in microelectronics, offers unrivalled film uniformity and conformality, in conjunction with strict control of film composition. In this review, the basics of lithium-ion batteries are shortly introduced, followed by a discussion of metal fluorides as potential lithium-ion battery materials. The basics of ALD are then covered, followed by a review of some conventional lithium-ion battery materials that have been deposited by ALD. Finally, metal fluoride ALD processes reported in the literature are comprehensively reviewed. It is clear that more research on the ALD of fluorides is needed, especially transition metal fluorides, to expand the number of potential battery materials available.

show abstract

ALD Technology - Present and Future Challenges

Cited by 22 publications

References 15 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

Metal Fluorides as Lithium-Ion Battery Materials: An Atomic Layer Deposition Perspective

Contact Info

Product

Resources

About

ALD Technology - Present and Future Challenges

Cited by 22 publications

References 15 publications

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

Metal Fluorides as Lithium-Ion Battery Materials: An Atomic Layer Deposition Perspective

Contact Info

Product

Resources

About

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films

Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS₂ Films