AlGaAs/AlGaInP VECSELs With Direct Emission at 740–770 nm

Nechay, Kostiantyn; Kahle, Hermann; Penttinen, Jussi-Pekka; Rajala, Patrik; Tukiainen, Antti; Ranta, Sanna; Guina, Mircea

doi:10.1109/lpt.2019.2924289

Cited by 11 publications

(9 citation statements)

References 16 publications

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“…Building on the progress of this work, we are able to demonstrate nearly triple the output power and that the laser can, at modest powers, emit on a single external cavity axial mode, making it ideally suited to second harmonic generation in PPLN waveguides. We acknowledge the recently published work of Nechay et al [11], which, using the same gain sample wafer, reached approximately 350 mW of power, but with significantly broader emission spectrum, and at 741 nm.…”

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confidence: 93%

High power 739 nm VECSELs for future Yb⁺ ion cooling

et al. 2021

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We present an operational characterisation of a vertical-external-cavity surfaceemitting laser (VECSEL) emitting around 739 nm with over 150 mW in a single fundamental spatial mode. Results show that the laser is capable of oscillating on a single cavity axial mode at 740 nm for up to 22 mW. Tuning of the optical emission is shown to reach 737.3 nm. Furthermore at best performance, the laser exhibits a slope efficiency of 8.3 %, and a threshold power of 1.27 W for an output coupler reflectivity of 98 %.

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confidence: 93%

High power 739 nm VECSELs for future Yb⁺ ion cooling

et al. 2021

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“…However, research on 770 nm DFB lasers is very rare (although index-coupled DFB lasers with secondary epitaxy were considered more than 30 years ago [15]). Ordinarily, semiconductor lasers emitting at 770 nm are not based on DFB, but on quantum dots [16], distributed Bragg reflector arrays [17], or vertical-external-cavity surface-emitting laser arrays [18]; however, DFB lasers emitting at 770 nm still remain more explored.…”

Section: Introductionmentioning

confidence: 99%

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Ruan

Chen

et al. 2021

Applied Sciences

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The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

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“…Watt-level emission was achieved by means of intracavity frequency-doubling of the 1500-1580 nm wafer-fused structures, yielding 1 W at 780 nm [9] and 1.5 W at 750 nm [10]. To date, the record VECSEL results at this wavelength region have been demonstrated with direct-emitting AlGaAsbased QW VECSELs resulting in output powers of 3.25 W and tunable over 741-773 nm [11], and 4.24 W tunable over 747-788 nm [12]. Despite these notable achievements, the state-ofthe-art AlGaAs-based direct emitting structures possess a set of drawbacks, namely, low laser lifetime, and polarization peculiarities degrading the output beam at high power [11].…”

Section: Introductionmentioning

confidence: 99%