AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4  W of direct emission power in the 740–790  nm spectral range

Abstract

An optically pumped vertical-external-cavity surface-emitting laser (VECSEL) for direct emission in the 740-790 nm wavelength region is reported. The gain structure is based on 12 AlGaAs quantum wells. We demonstrate wavelength tuning between 747 nm and 788 nm and free-running operation with a maximum power of 4.24 W (pump power limited) for a heat sink temperature of 14°C. This laser system addresses a spectral gap not currently covered by VECSEL technology and represents the most powerful VECSEL reported within the 7XX-nm wavelength region.

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

“…Watt-level emission was achieved by means of intracavity frequency-doubling of the 1500-1580 nm wafer-fused structures, yielding 1 W at 780 nm [9] and 1.5 W at 750 nm [10]. To date, the record VECSEL results at this wavelength region have been demonstrated with direct-emitting AlGaAsbased QW VECSELs resulting in output powers of 3.25 W and tunable over 741-773 nm [11], and 4.24 W tunable over 747-788 nm [12]. Despite these notable achievements, the state-ofthe-art AlGaAs-based direct emitting structures possess a set of drawbacks, namely, low laser lifetime, and polarization peculiarities degrading the output beam at high power [11].…”

“…To date, the record VECSEL results at this wavelength region have been demonstrated with direct-emitting AlGaAsbased QW VECSELs resulting in output powers of 3.25 W and tunable over 741-773 nm [11], and 4.24 W tunable over 747-788 nm [12]. Despite these notable achievements, the state-ofthe-art AlGaAs-based direct emitting structures possess a set of drawbacks, namely, low laser lifetime, and polarization peculiarities degrading the output beam at high power [11]. In this Letter, we report second-harmonic generation (SHG) based on new type of gain mirrors recently proposed for emission at 1550 nm [13].…”

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

“…This is a particular challenge when ultra-narrow atomic transitions at novel wavelengths are targeted [1][2][3], as for example the neutral strontium cooling and clock transitions at 689 and 698 nm, respectively [4]. In the past decade, opticallypumped vertical-external-cavity surface-emitting lasers (VECSELs) [5,6] have achieved higher brightness and narrower intrinsic linewidth operation when compared to other semiconductor laser technologies from the ultra-violet to the infra-red, via direct emission or efficient intra-cavity nonlinear conversion [7][8][9][10][11][12], with potential for miniaturization. With the exception of the shorter wavelength systems, the multi-quantum well gain structures of VECSELs are most often pumped using low brightness diode lasers and arrays, especially for emission wavelengths between 900 and 1200 nm (e.g., using InGaAs quantum wells) where high power and low cost 808 nm diodes are widely available.…”

InAs/InP quantum dot VECSEL emitting at 1.5 μm

“…VECSELs at the same wavelength range, 20 yet opening the way for superior performance in terms of broadband tuning, temperature stability and lower threshold. Second-harmonic generation of the VECSEL with emission at 1.5 µm constitutes a viable alternative to 750 nm direct emitting VECSEL, 21,22 by offering much longer lifetime and wider wavelength tunability. In turn, lasers at 750 nm range are needed for isotope separation, 23 spectroscopy, 24 and in medicine due to the large penetration depth into tissues at the wavelengths around 750 nm.…”