AlGaAsSb–InGaAsSb HPTs With High Optical Gain and Wide Dynamic Range

Abedin, M. Nurul; Refaat, Tamer F.; Sulima, O.V.; Singh, Upendra N.

doi:10.1109/ted.2004.838328

Cited by 47 publications

(35 citation statements)

References 23 publications

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“…Performance comparison with other SWIR detector technologies demonstrated that the electron-injection detectors offer more than three orders of magnitude better noise-equivalent sensitivity compared with state-of-the-art phototransistors operating at similar temperature . Data available in [3][4][5][6][7][8][9][10][11] , Abedin et al (2004), and Refaat et al (2007). detector is close to two orders of magnitude lower than the HgCdTe eAPD.…”

Section: Rise Time and Jittermentioning

confidence: 99%

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

2016

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Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels, and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status, and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays (FPAs) for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time in 2007. It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. This together with the feedback stabilized gain mechanism, makes formation of large-format high pixel density electr on-injection FPAs less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system and has a cutoff wavelength of 1700 nm. The layer structure consists of 500 nm InP injector/50 nm InAlAs etch stop/50 nm GaAsSb electron barrier (and hole trap)/1 μm InGaAs absorber. The epitaxial layers are grown on InP substrates. Electron-injection detector takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. EI detectors have been designed, fabricated, and tested during two generations of development and optimization cycles. We review our imager results using the firstgeneration detectors. In the second-generation devices, the dark current is reduced by two orders of magnitude, and bandwidth is improved by four orders of magnitude. The dark current density of the second-generation EI detector is shown to outperform the stateof-the-art technology, the SWIR HgCdTe eAPD by more than one order of magnitude. We demonstrate a performance comparison with other SWIR detector technologies with internal amplification and show that the electron-injection detectors offer more than three orders of magnitude better noise-equivalent sensitivity compared with state-of-the-art phototransistors operating at similar temperature. Second-generation devices provide high-speed response ~6 ns rise time, low jitter ~12 ps, high amplification of more than FiGURe 1 | The trend in noise reduction for state-of-the-art SwiR imaging arrays with cutoff wavelength (λc) ~1-1.5 μm over the past 30 years: the equivalent input noise of the ROiC determines the ...

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Section: Rise Time and Jittermentioning

confidence: 99%

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

2016

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“…That was the highest responsivity ever reported in the 0.6-to 2.4-μm wavelength range for the Sb-based photodetectors. Figure 2 compares the NEP variation with bias voltage of a HPT and of commercial InGaAs p-i-n photodiodes (Hamamatsu; G5852 and G5853) at different wavelengths [10]. The photodiodes have different cutoff wavelengths: 2.6-μm for G5853 and 2.3-μm for G5852.…”

Section: Demonstration Of Single Element Infrared Detectormentioning

confidence: 99%

“…In this context, it is necessary to explore alternative material systems, which can absorb radiation in the 1.0-to 2.5-μm range and are compatible with general requirements of a low-noise detector. InGaAsSb/AlGaAsSb heterostructures are very suitable for this application, and single-element HPTs based on these heterostructures demonstrated record responsivitites [3,4,[8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…These devices have been characterized at NASA LaRC and encouraging results have been obtained, including high responsivity, high detectivity, and relatively low NEP [3,4,[8][9][10][11][12][13][14]. Development of large-format Sb-based phototransistor FPA will enhance the capability of space-based active and passive remote sensing imaging systems and enable major advances in Astronomical, Earth, and planetary instruments.…”

Section: Introductionmentioning

confidence: 99%

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Infrared detector activities at NASA Langley Research Center

Abedin

Refaat

Sulima³

et al. 2008

MRS Proc.

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Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

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“…Several articles reported different device structures using materials such as InGaAsSb and AlGaAsSb [23][24][25][26][27][28][29] . Several reports discussed the performance of InGaAsSb APD especially for applications such as optical communication [23][24][25][26] .…”

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

III-V compound detectors for CO 2 DIAL measurements

et al. 2005

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Profiling of atmospheric carbon dioxide (CO 2 ) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 µm wavelength, for investigating atmospheric CO 2 . This drives the need for high quality detectors at this wavelength. Although 2 µm detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application.In this paper the detector requirements for a long range CO 2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-µm detectivity as high as 3.

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AlGaAsSb–InGaAsSb HPTs With High Optical Gain and Wide Dynamic Range

Cited by 47 publications

References 23 publications

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

Infrared detector activities at NASA Langley Research Center

III-V compound detectors for CO 2 DIAL measurements

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