AlGaInP-based Micro-LED array with enhanced optoelectrical properties

Han, Sancan; Xu, Chenchao; Li, Huijin; Liu, Shaogang; Xu, Huiwen; Zhu, Yuankun; Fang, Anle; Wang, Ding

doi:10.1016/j.optmat.2021.110860

Cited by 29 publications

(15 citation statements)

References 29 publications

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“…Figure 2 shows a schematic of the micro-LED (μ-LED). As the size of the μ-LED decreases, the sidewall defects have a greater impact on the wafer, leading to a decrease in the luminous efficiency of the chip [ 56 – 58 ]. Passivation in micro-sized LEDs is usually accomplished using plasma-enhanced chemical vapor deposition (PECVD), which uses hydrogen-based precursors to achieve rapid deposition rates [ 30 , 32 ].…”

Section: Ald Technologies For Micro-ledsmentioning

confidence: 99%

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

et al. 2021

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In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

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Section: Ald Technologies For Micro-ledsmentioning

confidence: 99%

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

et al. 2021

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“…These defects result in lower EQE of μ-LEDs with smaller diameter 4 , 5 . Although sidewall passivation can improve the injection current efficiency and EQE, AlGaInP μ-LEDs typically suffer from much stronger size-dependent efficiency reduction owing to their high surface recombination velocities, longer carrier diffusion lengths 6 , 7 , and limited improvements through sidewall passivation 8 . Recently, InGaN-based red μ-LEDs have been successfully grown by metal–organic chemical vapor deposition (MOCVD) on Ga 2 O 3 , sapphire, and Si substrates 9 – 11 .…”

Section: Introductionmentioning

confidence: 99%

Study on the effect of size on InGaN red micro-LEDs

Horng

Chen

et al. 2022

Sci Rep

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In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10 × 10 μm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.

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“…Figure 4b shows the simulated result of IQE drop in relation with the LED chip size of blue and red LEDs based on ABC model 63 . To alleviate the efficiency drop caused by sidewall defects, depositing passivation materials by atomic layer deposition (ALD) or plasma enhanced chemical vapor deposition (PECVD) is proven to be helpful for both GaN and AlGaInP based LEDs 64,65 . In addition, applying KOH (Potassium hydroxide) treatment after ALD can further reduce the EQE drop of micro-LEDs 66 (Fig.…”

Section: Fabrication and Properties Of Micro-ledsmentioning

confidence: 99%

Augmented reality and virtual reality displays: emerging technologies and future perspectives

et al. 2021

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With rapid advances in high-speed communication and computation, augmented reality (AR) and virtual reality (VR) are emerging as next-generation display platforms for deeper human-digital interactions. Nonetheless, to simultaneously match the exceptional performance of human vision and keep the near-eye display module compact and lightweight imposes unprecedented challenges on optical engineering. Fortunately, recent progress in holographic optical elements (HOEs) and lithography-enabled devices provide innovative ways to tackle these obstacles in AR and VR that are otherwise difficult with traditional optics. In this review, we begin with introducing the basic structures of AR and VR headsets, and then describing the operation principles of various HOEs and lithography-enabled devices. Their properties are analyzed in detail, including strong selectivity on wavelength and incident angle, and multiplexing ability of volume HOEs, polarization dependency and active switching of liquid crystal HOEs, device fabrication, and properties of micro-LEDs (light-emitting diodes), and large design freedoms of metasurfaces. Afterwards, we discuss how these devices help enhance the AR and VR performance, with detailed description and analysis of some state-of-the-art architectures. Finally, we cast a perspective on potential developments and research directions of these photonic devices for future AR and VR displays.

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AlGaInP-based Micro-LED array with enhanced optoelectrical properties

Cited by 29 publications

References 29 publications

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Study on the effect of size on InGaN red micro-LEDs

Augmented reality and virtual reality displays: emerging technologies and future perspectives

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