AlGaInP/GaAs power HBTs design and fabrication

Abstract

High‐power‐density and high‐efficiency AlGaInP/GaAs power HBTs have been successfully designed and fabricated by using 14 double‐finger emitters in parallel and related input and output matched circuits. The device material structure and layout design are discussed and optimized in detail. An output power of 1.07 W (power density of 2 mW/μm2) with a power‐added efficiency of 64% at 2 GHz has been achieved. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 332–334, 2000.