AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy

“…Starting GaAs growth on InGaAs in the first monolayers the segregated indium will be incorporated leading to an InGaAs layer with a decreasing indium gradient. This effect was also found when overgrowing AlInGaP with GaAs [16]. Fig.…”