1993
DOI: 10.1117/12.141111
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AlGaInP materials grown by elemental-source molecular beam epitaxy

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“…However, the present values are among the best ones reported for SSMBE-grown material [8], and further reduction in J th is still to be expected. Other groups have reported threshold current densities well above 1 kA cm −2 for SSMBE-grown visible lasers [9][10][11][12]. Figure 3 shows an example of a light-current curve of a 120 × 600 µm 2 laser with AR/HR ≈ 10/95% coatings, as obtained in the pulsed mode of operation (pulse width of 200 ns at 3 kHz repetition rate) at 20 • C. The laser exhibited the output power of 4.5 W at a 4.3 A drive current and the high slope efficiency of 1.22 W A −1 .…”
Section: Resultsmentioning
confidence: 94%
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“…However, the present values are among the best ones reported for SSMBE-grown material [8], and further reduction in J th is still to be expected. Other groups have reported threshold current densities well above 1 kA cm −2 for SSMBE-grown visible lasers [9][10][11][12]. Figure 3 shows an example of a light-current curve of a 120 × 600 µm 2 laser with AR/HR ≈ 10/95% coatings, as obtained in the pulsed mode of operation (pulse width of 200 ns at 3 kHz repetition rate) at 20 • C. The laser exhibited the output power of 4.5 W at a 4.3 A drive current and the high slope efficiency of 1.22 W A −1 .…”
Section: Resultsmentioning
confidence: 94%
“…Such a possibility is foreseeable, as one may judge from the successful results obtained recently for phosphide-based devices grown by SSMBE [6][7][8]. However, reports on SSMBE-grown red lasers are scarce in the literature [9][10][11][12] and their results are inferior to those attainable by MOCVD.…”
Section: Introductionmentioning
confidence: 99%