Solid source molecular beam epitaxy growth of GaInP/AlGaInP heterostructures and 600-nm-range quantum well laser diodes

Toivonen, M.; Jalonen, M.; Savolainen, P.; Kongas, J.; Pessa, M.

doi:10.1109/iciprm.1997.600147

Cited by 3 publications

(1 citation statement)

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“…To date, the 600-nm-range RCLED and VCSEL structures have mostly been grown by the metal-organic chemical vapor deposition (MOCVD) method [2-31. Recently, toxic-gas-free all-solid-source molecular beam epitaxy (SSMBE) has lbeen introduced as an alternative to MOCVD for growth of AlGaInP-based devices on exact cut wafers [4].…”

Section: Introductionmentioning

confidence: 99%

High-performance visible resonant-cavity light-emitting diodes grown by solid source molecular beam epitaxy

Jalonen

Toivonen²,

Kongas³

et al.

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance El

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We report on the visible (660 nm) monolithic resonant-cavity light-emitting diode grown by solid source molecular beam epitaxy. The device consisted of a 1.h-thick AlGaInP-based optical active region surrounded by AlGaAs-based distributed Bragg reflectors. Current aperture for the emitter was formed by lateral selective wet thermal oxidation. High continuous-wave output power of almost 2 m W with 5 n m linewidth and peak wall-plug efficiency of 3 % were attained without heatsinking from the 80-pm device. This device was very resistant against temperature variations.

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Section: Introductionmentioning

confidence: 99%