AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Ye; Zhao, Chao; Li, Jinmin

doi:10.1016/j.jcrysgro.2014.10.015

Cited by 98 publications

(72 citation statements)

References 18 publications

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“…11 Apparently, the p-type doping is one of the major issues limiting the performance of UV LEDs. [12][13][14] enhance the hole injection. [24][25][26] In this regard, Al(Ga)N-based UV LEDs, [27][28][29] UV random lasers, 21,[29][30][31] 35 and photoconductivity measurements.…”

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confidence: 99%

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

et al. 2018

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confidence: 99%

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

et al. 2018

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“…Detailed growth process could be found in Ref. [10] and [11]. Based on the AlN templates, two different structures were grown.…”

Section: Contributedmentioning

confidence: 99%

“…Based on the AlN templates, two different structures were grown. The first structure, labelled as Sample A, was derived from our previous DUV LEDs' structure [11]. It has 20-period AlN/AlGaN superlattices, a 3-μm Al 0.…”

Section: Contributedmentioning

confidence: 99%

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Deep ultraviolet lasing from AlGaN multiple‐quantum‐well structures

Yan

Tian

Chen

et al. 2015

Phys. Status Solidi C

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We report our research work on AlGaN/Al(Ga)N multiple‐quantum‐well (MQW) DUV laser structures. Two types of MQW structures, that is, AlxGa1‐xN/AlyGa1‐yN MQW (Sample A) and AlzGa1‐zN/AlN MQW (Sample B), were grown on sapphire substrates by Metal‐organic chemical vapour deposition. Optically pumped lasing at room temperature has been achieved from both structures. For Sample A, the main lasing emission wavelength is 288 nm along with some parasitic longer wavelength peaks. Numerical simulation results indicate that the optical confinement factor in Sample A is very low, less than 0.5%. This resulted in the high lasing threshold and short lasing lifetime of Sample A. The optical confinement factor of Sample B is greatly increased to more than 10%. This effectively improved the lasing performance of Sample B. Its lasing threshold is estimated to be 523 kW/cm2 and the lasing spectra peaked at around 281 nm. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…However, the performance of LEDs suffers from the lack of native substrates, high dislocation density, the existence of polarization fields, the related quantum-confined Stark effect (QCSE), and efficiency droop, etc. [1,2].…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN nanowire LEDs and lasers

Zhao

Jahangir

et al. 2016

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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Abstract-The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the "green-gap" and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

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AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

Cited by 98 publications

References 18 publications

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Deep ultraviolet lasing from AlGaN multiple‐quantum‐well structures

InGaN/GaN nanowire LEDs and lasers

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