AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser

Zheng, Zhongming; Mei, Yang; Long, Hao; Hoo, Jason; Guo, Shiping; Li, Qingxuan; Ying, Leiying; Zheng, Zhi-Wei; Zhang, Baoping

doi:10.1109/led.2021.3052725

Cited by 21 publications

(8 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The epitaxially laterally overgrown, process-induced voids in the UVC-LED structure had been reported to increase the IQE and the light extraction efficiency. The optically pumped AlGaN vertical-cavity surface-emitting laser had been reported in the deep ultraviolet range. The epitaxial AlN/AlGaN − -distributed Bragg reflector (DBR) structures had been reported for the DUV wavelength range; they had a large lattice mismatch, a small refractive index, different properties, and a long epitaxial growth time.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors

Chen

Wang

et al. 2023

ACS Omega

View full text Add to dashboard Cite

Ultraviolet-C AlGaN resonant-cavity light-emitting diodes with top and bottom pipe-AlGaN-distributed Bragg reflectors (DBRs) have been demonstrated. For the top/bottom DBR structures, 20 pairs of n+-AlGaN:Si/n-AlGaN:Si stack structures were transformed into the pipe-AlGaN:Si/n-AlGaN:Si DBRs through a doping-selective electrochemical wet etching process. The reflectivity of the pipe-AlGaN DBR structure was measured as 90% at 276.7 nm with a 20.9 nm flat stopband width. The anisotropic optical properties of the pipe-AlGaN DBR structure had been analyzed through the polarization-dependent reflectance spectra. For temperature-dependent reflectance spectra, the central wavelengths were slightly redshifted from 275 nm (100 K) to 281 nm (600 K) due to thermal expansion, refractive index increase, and partial strain release phenomena in the pipe-DBR structure. High photoluminescence emission intensity and line-width reducing phenomena were observed at 10 K in the UVC-LED with the resonant-cavity structure, which has potential for high-efficiency UV-C light source applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors

Chen

Wang

et al. 2023

ACS Omega

View full text Add to dashboard Cite

show abstract

“…Nonetheless, the electrically injected AlGaN nanowire UV SE lasers demonstrated hitherto are all based on random optical cavities 32 – 35 , whereas AlGaN UV VCSELs are all through optical pumping and are all with large lasing threshold power densities 8 , 11 , 36 – 45 . For instance, the threshold power density for sub-280 nm lasing is 1.2 MW/cm 2 39 , and even for lasing at longer wavelength (e.g., close to 400 nm) the threshold power density is in the range of around 200–400 kW/cm 2 11 , 40 . Herein, we demonstrate ultralow threshold, SE lasing in the UV spectral range using GaN-based epitaxial nanowire photonic crystal (epi-NPC) structures, which cannot only overcome the drawbacks of random optical cavities with self-organized nanowires, but also greatly mitigate the challenges in conventional AlGaN UV VCSELs.…”

Section: Introductionmentioning

confidence: 99%

Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires

Vafadar

Zhao

2023

Sci Rep

View full text Add to dashboard Cite

Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm2 to MW/cm2. Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm2 (~ 49 μJ/cm2), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers.

show abstract

“…The internal quantum efficiency, carrier injection efficiency, and light extraction efficiency must be improved to obtain UV LED devices with high outer quantum efficiency. In recent years, some research groups have successfully prepared high-quality AlGaN optically pumped lasers. − In addition, distributed Bragg reflectors (DBRs) can improve the light extraction efficiency of LEDs. In the UV wavelength region, the AlN/(Ga, Al, In) GaN DBRs prepared by traditional epitaxy technology have problems such as large stress, large lattice mismatch, and a small refractive index difference. , The n + -AlGaN layer with a high refractive index, high stress, and high defect density can be transformed into mesoporous AlGaN layers with a low refractive index, low stress, and low defect density by electrochemical etching, and the UV LEDs with high luminescence efficiency can be fabricated by the regrowth technology.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors

Cao

Sun

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

2 in. mesoporous AlGaN (MP-AlGaN) distributed Bragg reflectors (DBRs) were obtained via electrochemical etching in 0.25 M oxalic acid solution and then were used as the substrate for growth of the large-area and highly reflective AlInGaN light-emitting diodes (LEDs) via the metal−organic chemical vapor deposition (MOCVD) technology. Compared to reference AlInGaN LEDs without DBRs, the wafer-scale AlInGaN LED structure with MP-AlGaN DBRs exhibit a nearly sevenfold increased luminescence intensity ascribed to the light reflection effect of MP-AlGaN DBRs and increased internal quantum efficiency of the multiple quantum wells (MQWs) layer. The blue shift of the PL peak is due to stress relaxation in the AlInGaN MQWs layer. Moreover, AlInGaN LEDs with MP-AlGaN DBRs present an increased luminescence lifetime compared with that of reference AlInGaN LEDs, which confirms the improved crystalline quality of the AlInGaN MQWs layer.

show abstract

AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser

Cited by 21 publications

References 33 publications

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors

Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires

Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors

Contact Info

Product

Resources

About