AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization

We proposed and fabricated a metal-insulator-semiconductor-insulator-metal type dual-wavelength sensitive UV sensor by using an AlGaN/GaN hetero-structure layer epitaxially grown on a sapphire substrate and a thin Al2O3 layer inserted between AlGaN and Ni Schottky electrodes to reduce dark current and improve the UV/visible rejection ratio. The proposed sensor shows high photo-responsive current to both UV wavelength regimes with a significantly improved UV/visible rejection ratio under the regime of the GaN-related UV response. Cut-off wavelengths can be controlled by changing the bias below and above 10 V.

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AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization

Abstract: Field distribution and collection efficiency in an AlGaN metal-semiconductor-metal detector

Cited by 2 publications

References 29 publications

Reconsideration of the gallium nitride: Dual functionality as an electron transporter and transparent conductor for recyclable polymer solar cell substrate applications

Reconsideration of the gallium nitride: Dual functionality as an electron transporter and transparent conductor for recyclable polymer solar cell substrate applications

Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

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