AlGaN-based UV photodetectors

Monroy, E.; Calle, F.; Pau, J. L.; Muñoz, E.; Omnès, F.; Beaumont, B.; Gibart, P.

doi:10.1016/s0022-0248(01)01305-7

Cited by 165 publications

(107 citation statements)

References 34 publications

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“…This already shows an improved conductivity compared to earlier developed Ge photoconductive devices [22]. A nonlinear relation between photocurrent and optical power can be observed, which is often observed in photoconductive detectors [23][24]: the responsivity increases when the input power decreases until it reaches Figure 4 presents the normalized detector responsivities (measured with an FTIR) as a function of the wavelength for different GeSn/Ge designs. This measurement allows accessing the intrinsic absorption features of the GeSn/Ge structure.…”

Section: Photodetector Characterizationmentioning

confidence: 71%

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Gassenq¹,

Gencarelli²,

Campenhout³

et al. 2012

Opt. Express

185

105

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A surface-illuminated photoconductive detector based on Ge 0.9 Sn 0.1 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications. 2012 Optical Society of America References and links1. J. Menendez and J. Kouvetakis "Type-I Ge/Ge1−x−ySixSny strained-layer hetero-structures with a direct Ge Bandgap", Applied Physics Letters, 85(7), 1175-1177 (2004). 2. G. Sun, R. A. Soref, H. H. Cheng, "Design of a Si-based lattice-matched room temperature GeSn/GeSiSn multiquantum-well mid-infrared laser diode", Optics Express 18(19), 19957-19965 (2010). 39(3), 1871-1883, (1989). 14. M. Krijn, "Heterojunction band offsets and effective masses in III-V quaternary alloys" Semiconductor Science and Technology, 6(1), 27-31 (1991

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Section: Photodetector Characterizationmentioning

confidence: 71%

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Gassenq¹,

Gencarelli²,

Campenhout³

et al. 2012

Opt. Express

185

105

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“…[20] Significant progress has been made in AlGaN-based "visible blind" or "solar blind" UV detectors to detect weak UV signals in the presence of strong ambient light in scientific research, industrial, and military applications. [21][22][23][24][25][26][27][28][29] UV electroabsorption modulators have generally received much less attention. [30][31][32][33][34][35][36] In this paper, we review progress in developing UV optoelectronic devices based on AlGaN alloys grown by plasmaassisted molecular beam epitaxy (PAMBE).…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Moustakas

2016

MRS Communications

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This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films and their quantum wells (QWs), grown by plasmaassisted molecular beam epitaxy. A growth mode, leading to band-structure potential fluctuations and resulting in AlGaN multiple QWs with internal quantum efficiency as high as 68%, is discussed. Atomic ordering in these alloys, which is different from that observed in traditional III-V alloys, and its effect on device performance is also addressed. Finally, progress in UV-light-emitting diodes, UV lasers, UV detectors, electroabsorption modulators, and distributed Bragg reflectors is presented.

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“…Optoelectronic devices operating beyond the 3 eV range applications in environmental contaminant decomposition [3], UV lasers and sensors [4], novel optical storage media and violet-bluegreen LEDs, to name but a few. Particular attention has been paid to the II-VI group materials and III-nitrides which are promising materials for short wavelength optical devices.…”

mentioning

confidence: 99%

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Cowley

Foy

Danilieuk

et al. 2009

Physica Status Solidi (a)

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Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300–400 nm spectral range. Current materials being used for such devices are typically based on II–VI and III‐nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III‐N devices is lattice mismatch‐induced high dislocation densities for epitaxially grown layers on non‐native substrates. γ‐CuCl is a direct bandgap material and an ionic wide bandgap I–VII semiconductor with a room temperature free exciton binding energy of ∼190 meV (compared to ∼25 meV and ∼60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (λ ∼ 366 nm). The lattice constant of γ‐CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ‐CuCl on Si(100) and Si(111) using vacuum‐based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite‐zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux‐driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X‐ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X‐ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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AlGaN-based UV photodetectors

Cited by 165 publications

References 34 publications

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

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