AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

Jatal, Wael; Tonisch, Katja; Baumann, Uwe; Schwierz, Frank; Pezoldt, Jörg

doi:10.4028/www.scientific.net/msf.740-742.1115

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…Comparison of the cutoff frequencies of our E‐mode tri‐gate and D‐mode planar GaN/Al 0.2 Ga 0.8 N/AlN/GaN HEMTs on Si with our last results and with the best f T data reported by other groups for AlGaN/GaN HEMTs on Si and on SiC .…”

Section: Resultssupporting

confidence: 75%

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Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

Jatal

Baumann

Jacobs

et al. 2017

Phys. Status Solidi A

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The realization of depletion-mode planar and both enhancement-and depletion-mode tri-gate high electron mobility transistors (HEMTs) based on Al 0.2 Ga 0.8 N/AlN/GaN heterostructures grown on silicon substrates using an ultrathin 3C-SiC transition layer is presented. This substrate configuration simplifies heterostructure growth compared to SiC and thick 3C-SiC substrates. The threshold voltage of the tri-gate devices strongly depends on the AlGaN/GaN body (fin) width. A transition from depletion-mode to enhancement-mode operation occurred at 110 nm body width for tri-gate devices without Si 3 N 4 passivation, and is expected to occur at 75 nm for devices with Si 3 N 4 passivation. Threshold voltages of À0.25/ 0.35 V were achieved at fin widths of 82/100 nm with/without Si 3 N 4 passivation, respectively, for the tri-gate HEMTs in comparison to À3.5 V for the planar HEMTs. Cutoff frequencies f T of 45 GHz and maximum frequencies of oscillation f max of 50 GHz have been measured for our best 100-nm tri-gate enhancement-mode HEMTs, while depletionmode planar HEMTs with the same gate length showed 110 GHz for both f T and f max . This demonstrates the applicability of the developed substrate configuration for high-performance device applications.

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Section: Resultssupporting

confidence: 75%

“…Later, micrometer thick 3C‐SiC(111) layers were used for the same purpose . Albeit, it was shown that for reliable heteroepitaxial growth and device fabrication thick silicon carbide layers are not necessary . A further advantage of a SiC transition layer is its high thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

Jatal

Baumann

Jacobs

et al. 2017

Phys. Status Solidi A

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Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Benkhelifa

Kirste

Manz

et al. 2019

Journal of Applied Physics

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The excellent characteristics of high electron mobility transistors based on AlGaN/GaN heterostructures rely on the properties of the substrate used for their epitaxial growth. In this work, we evaluate 3C-SiC as an alternative to the commonly used 4H-SiC. Up to 2 μm thick 3C-SiC layers on Si templates have been used as substrates to develop an epitaxial growth process for high-quality AlGaN/GaN heterostructures. We demonstrate the deposition of up to 5 μm crack-free heterostructures on 2 μm thick 3C-SiC on Si by using a metalorganic chemical vapor deposition process. Several characteristics of these structures, such as crystal quality, morphology, and electrical properties, are close to what can be achieved when using 4H-SiC substrates. The results of this work motivate further development in order to obtain thicker and semi-insulating 3C-SiC layers to be used instead of the expensive and size-limited 4H-SiC substrates.

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AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

Cited by 2 publications

References 13 publications

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

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