AlGaN/GaN current aperture vertical electron transistors

Ben-Yaacov, I.; Seck, Yee-Kwang; Heikman, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1109/drc.2002.1029492

Cited by 12 publications

(6 citation statements)

References 1 publication

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“…Several device concepts are currently investigated, such as vertical trench metal oxide semiconductor field effect transistor (FET) [4,5], finFET [6,7] or vertical junction FET [8][9][10]. Another promising design is the CAVET [11][12][13][14][15][16][17]. Here, a two-dimensional electron gas (2DEG) with high carrier mobility is formed above a CBL with an aperture.…”

Section: Introductionmentioning

confidence: 99%

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

et al. 2019

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In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical vapor deposition (MOCVD). Channel and barrier layers were then regrown by either molecular beam epitaxy (MBE) or MOCVD. Scanning electron microscope (SEM) images and atomic force microscope (AFM) height profiles are used to identify the different regrowth mechanisms. We show that an AlN interlayer below the channel layer was able to reduce Mg diffusion during the high temperature MOCVD regrowth process. For the low-temperature MBE regrowth, Mg diffusion was successfully suppressed. CAVET were realized on the various samples. The devices suffer from high leakage currents, thus further regrowth optimization is needed.

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Section: Introductionmentioning

confidence: 99%

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

et al. 2019

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“…Recently, GaN-based current-aperture vertical electron transistors (CAVETs) have become one of the most important research branches in the field of high-power applications, due to their reduced chip area, the packaging convenience and the excellent immunity to dc-RF dispersion [1]. A great deal of effort has been made to develop this kind of devices and remarkable progress has been achieved [1][2][3][4][5][6][7][8]. However, although the breakdown voltage (BV ) could be improved by lightly doping the thick drift layer at the expense of the specific on-resistance (R on A), the BV of the current GaN-based CAVETs is severely limited by the nonuniform electric field distribution in the drift layer [9], which is very similar to that of Si-based power MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance

Mao¹,

Shi²,

Yang

et al. 2018

Semicond. Sci. Technol.

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A novel GaN-based step-doping superjunction current-aperture vertical electron transistor (SD-SJ CAVET) with SD n-and p-pillars is proposed and demonstrated by two-dimensional numerical simulations. Compared with the conventional GaN-based SJ CAVET, the greater doping concentration and more uniform electric field distributions can be realized in SD-SJ CAVET based on the special structure features, leading to the further improvement in both breakdown voltage (BV ) and specific on-resistance (R on A). Optimized results for SD-SJ CAVET with three doping parts in n-and p-pillars show that the increase in BV is ∼30% and the reduction of the corresponding R on A can be improved from 10.6% to 31.1%, with N N,1 (the doping concentration of the part N 1 in n-pillar) decreasing from 1.5×10 16 to 0.5×10 16 cm −3 , compared with SJ CAVET under the same aspect ratio. And further reduction in R on A can be achieved by adding differently doped layers in n-and p-pillars without obvious deterioration in BV. This SD-SJ CAVET can be fabricated by selective area growth technology.

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“…The high mobility and saturation velocity enables fast switching [1]. Examples of vertical GaN devices include CAVET [2], Trenchgate MOSFET [3], JFET and the vertical p-n diode [4]. The AlGaN/GaN CAVET structure has been successfully demonstrated using an Mg implanted blocking layer [5], but the drift layer is yet to be optimized for high breakdown voltages, V br .…”

Section: Introductionmentioning

confidence: 99%

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

Agarwal

Gupta

Enatsu

et al. 2016

Semicond. Sci. Technol.

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Controlled n-type doping down to 2 × 10 15 cm −3 was achieved in GaN grown on sapphire by MOCVD by balancing the n-type Si doping with respect to the background carbon and oxygen levels. A dopant level of ∼1×10 16 cm −3 displayed a very high mobility of 899 cm 2 V −1 s −1 . High electron mobility in the drift layer leads to a low on resistance and high current densities without compromising on any other properties of the device. Schottky diodes processed on these low n-type layers showed low R on values, while the p-n diodes display high reverse breakdown voltages in excess of 1000 V for 8 μm thick drift layers with a doping of 2 × 10 15 cm −3 .

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AlGaN/GaN current aperture vertical electron transistors

Cited by 12 publications

References 1 publication

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

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