AlGaN/GaN HEMT device structure optimization design

Zhou, Xiaopeng; Cheng, Zhiqun; Hu, Sha; Zhou, Wei; Zhang, Sheng

doi:10.1109/ipfa.2009.5232638

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…The epitaxial layer consists of an unintentionally doped 1.5 m GaN buffer layer, 1 nm AlN spacer layer, 4 nm low Al component Al 0.04 Ga 0.96 N, and a 20 nm Al 0.27 Ga 0.73 N barrier layer as shown in Figure 1. Epitaxial layer structure of Al 0.27 Ga 0.73 N/AlN/Al 0.04 Ga 0.96 N/ GaN HEMT is proposed and optimized by combining theory calculation and TCAD software; detail design process is given in our previous papers [13,14]. An averaged electron mobility of 1800 cm 2 /(v⋅s) and a sheet carrier density of 1.0 × 10 13 /cm 2 are obtained by room temperature Hall measurement.…”

Section: Materials Preparation and Device Fabricationmentioning

confidence: 99%

Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Jin¹,

Cheng

Wang³

2013

International Journal of Antennas and Propagation

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This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.

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Section: Materials Preparation and Device Fabricationmentioning

confidence: 99%

Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Jin¹,

Cheng

Wang³

2013

International Journal of Antennas and Propagation

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“…Epitaxial layer structure of Al 0.27 Ga 0.73 N/AlN/ Al 0.04 Ga 0.96 N/GaN HEMT is proposed and optimized by combining theory calculation and TCAD software, detail design process is given in our previous papers [10,11]. Epitaxial layer structure of Al 0.27 Ga 0.73 N/AlN/ Al 0.04 Ga 0.96 N/GaN HEMT is proposed and optimized by combining theory calculation and TCAD software, detail design process is given in our previous papers [10,11].…”

Section: Device Design and Analysismentioning

confidence: 99%

Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN

Cheng

Zhou

et al. 2011

Micro & Optical Tech Letters

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We consider an example with the following specifications: Si relative permittivity e r1 ¼ 11.9, Si conductivity r 1 ¼ 7.4S/m, lossless SiO 2 e r2 ¼ 4, Cu r c ¼ 5.8e7 S/m, a ¼ 10 lm Figure 4(a) presents the insertion losses of a corner (port 1) and a via near the center (port 6) in a 4-by-4 coated TSV via array. Figure 4(b) gives the return losses. These results are in good agreement with HFSS simulation. It shows that the center via has better high-frequency performance than the corner via because surrounding vias shield it from radiation.Figures 5(a) and 5(b) present the near end crosstalk at a corner via and a via near the center, respectively. It shows the coupling issues among the TSVs will become significant beyond 15 GHz. The crosstalk at the corner via is much stronger than at vias near the center, because scattered radiation accumulates at the via array boundary. Because of the larger separation of diagonal vias, the diagonal crosstalk is usually weaker than the adjacent crosstalk. The CPU time required to simulate a 4-by-4 TSV via array using Matlab code is 5.89 s for 79 frequency points from 1 to 40 GHz, whereas HFSS simulations took 15 h and 43 min for the same structure. All data were generated using an Intel Xeon 2.93G Quad-core processor. The results of these two methods agree well, except small differences below 5 GHz. We will use a quasi-static approach to analyze low-frequency behavior in a future study. 2. B. Wu and L. Tsang, Modeling multiple vias with arbitrary shape of antipads and pads in high speed interconnect circuits, IEEE Microwave Wireless Comp Lett 19 (2009), 12-14. 3. B. Wu and L. Tsang, Full-wave modeling of multiple vias using differential signaling and shared antipad in multilayered high speed vertical interconnects, Prog Electromagn Res 97 (2009), 129-139. 4. B. Wu and L. Tsang, Signal integrity analysis of package and printed circuit board with multiple vias in substrate of layered dielectrics, IEEE Trans Adv Packag 33 (2010), 510-516. 5. H. Hasegawa, M. Furukawa, and H.

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Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

Ghosh¹,

Mondal²,

Kar³

et al. 2021

Silicon

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Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective capacitance by using different oxide materials on source and drain sides, and determination of optimum length of oxides for the superior device performance has been presented in this work. This paper shows a detailed performance analysis of the Analog Figure of Merits (FoMs) like variation of Drain Current (I DS ), Transconductance (g m ), Output Resistance (R 0 ), Intrinsic Gain (g m R 0 ), RF FoMs like cut-off frequency (f T ), maximum frequency of oscillation (f MAX ), gate to source resistance (R GS ), gate to drain resistance (R GD ), gate to drain capacitance(C GD ), gate to source capacitance (C GS ) and total gate capacitance (C GG ) using Non-Quasi-Static (NQS) approach. Power analysis includes Output power (P out ), Gain in dBm and power output e ciency (POE) have been studied. Studies reveal that the device with higher dielectric material towards source side shows superior performance. On subsequently changing the proportion of two oxides in a layer by varying length, it is observed that as the proportion of oxide increases the device demonstrates more desirable Analog and RF characteristics while best power performance is obtained from device with equal lengths of HfO 2 and SiO 2 .Author's Contribution Author 1 (Sneha Ghosh): Conceived and performed the analog analysis, contributed to data and analysis tools, and wrote the paper.Author 2 (Anindita Mondal): Conceived and performed the RF analysis and power analysis, calibrated the results, and wrote the paper.Author 3 (Mousiki Kar): Conceived of the presented idea veri ed the analytical methods and supervised the ndings of this work.Author 4 (Atanu Kundu): Conceived the original idea, conceptualization, review, editing and supervised the project.

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AlGaN/GaN HEMT device structure optimization design

Cited by 5 publications

References 7 publications

Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN

Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

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AlGaN/GaN HEMT device structure optimization design

Cited by 5 publications

References 7 publications

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

Effect of composited‐layer AlyGa1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier AlxGa1‐xN

Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

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Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Impact of the Gate Width of Al_0.27Ga_0.73N/AlN/Al_0.04Ga_0.96N/GaN HEMT on Its Characteristics

Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN