Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN

Abstract

We consider an example with the following specifications: Si relative permittivity e r1 ¼ 11.9, Si conductivity r 1 ¼ 7.4S/m, lossless SiO 2 e r2 ¼ 4, Cu r c ¼ 5.8e7 S/m, a ¼ 10 lm Figure 4(a) presents the insertion losses of a corner (port 1) and a via near the center (port 6) in a 4-by-4 coated TSV via array. Figure 4(b) gives the return losses. These results are in good agreement with HFSS simulation. It shows that the center via has better high-frequency performance than the corner via because surrounding vias shield it from radiation.Figures 5(a) and 5(b) present the near end crosstalk at a corner via and a via near the center, respectively. It shows the coupling issues among the TSVs will become significant beyond 15 GHz. The crosstalk at the corner via is much stronger than at vias near the center, because scattered radiation accumulates at the via array boundary. Because of the larger separation of diagonal vias, the diagonal crosstalk is usually weaker than the adjacent crosstalk. The CPU time required to simulate a 4-by-4 TSV via array using Matlab code is 5.89 s for 79 frequency points from 1 to 40 GHz, whereas HFSS simulations took 15 h and 43 min for the same structure. All data were generated using an Intel Xeon 2.93G Quad-core processor. The results of these two methods agree well, except small differences below 5 GHz. We will use a quasi-static approach to analyze low-frequency behavior in a future study. 2. B. Wu and L. Tsang, Modeling multiple vias with arbitrary shape of antipads and pads in high speed interconnect circuits, IEEE Microwave Wireless Comp Lett 19 (2009), 12-14. 3. B. Wu and L. Tsang, Full-wave modeling of multiple vias using differential signaling and shared antipad in multilayered high speed vertical interconnects, Prog Electromagn Res 97 (2009), 129-139. 4. B. Wu and L. Tsang, Signal integrity analysis of package and printed circuit board with multiple vias in substrate of layered dielectrics, IEEE Trans Adv Packag 33 (2010), 510-516. 5. H. Hasegawa, M. Furukawa, and H.

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

“…MOCVD (Metal-Organic Chemical Vapor Deposition) technology is a key technology of fabrication of GaN-based optoelectronic and microwave high-power devices, such as blue-light-emitting and high-power laser diodes [1][2][3]. Presently, the third generation semiconductor industry, with GaN and nitride compounds as the typical representatives, develops very fast, especially in the semiconductor lighting industry [4][5][6][7].…”

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

“…There are many papers about improving its DC and AC performances by changing material or structure of epitaxial layer of AlGaN/GaN HEMTs [5][6][7][8]. In recent years, a novel structure Al Ga 1− N/Al Ga 1− N/GaN HEMT with low Al composite inserting layer Al Ga 1− N has been reported [9][10][11] and MMICs based on AlGaN/GaN HEMT are designed by our group [12]. This paper will present the impact of layout sizes of Al 0.27 Ga 0.73 N/AlN/Al 0.04 Ga 0.96 N/GaN HEMTs based on SiC substrate on its characteristics.…”

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

“…Using MOCVD (metal-organic chemical vapor deposition) to analyze the growth of GaN-base photoelectric devices on the sapphire substrate is a common method in the semiconductor lighting industry [1][2][3][4][5]. In recent years, along with the unceasing enhancement of epitaxy technology and related technologies, larger sapphire substrates are needed.…”