AlGaN/GaN HEMT on Diamond Technology Demonstration

Jessen, Gregg H.; Gillespie, J.; Via, G. D.; Crespo, A.; Langley, Derrick; Wasserbauer, J.; Faili, Firooz; Francis, Daniel; Babic, D.I.; Ejeckam, F.; Guo, Shiping; Eliashevich, I.

doi:10.1109/csics.2006.319952

Cited by 48 publications

(29 citation statements)

References 11 publications

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“…Finally, the carrier wafer is etched from the front side of the epitaxial layer. As previously reported [6] and supported by our results, the attachment process leaves the 2-D electron gas confinement layer intact. Fig.…”

Section: Introductionsupporting

confidence: 89%

Comparison of GaN HEMTs on Diamond and SiC Substrates

Felbinger

Chandra

Sun

et al. 2007

IEEE Electron Device Lett.

129

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The performance of AlGaN/GaN high-electronmobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery W G = 250 µm, exhibiting f t = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.Index Terms-GaN on diamond, high-electron-mobility transistor (HEMT), microwave power, thermal effects in AlGaN, X -band.

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Section: Introductionsupporting

confidence: 89%

Comparison of GaN HEMTs on Diamond and SiC Substrates

Felbinger

Chandra

Sun

et al. 2007

IEEE Electron Device Lett.

129

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“…While some improvement in GaN-on-SiC can be gained by optimizing thermal transport across the AlN nucleation layer at the GaN/SiC interface, 7,8 a far greater reduction in thermal resistance could be gained by replacing the substrate with the highest thermal conductivity material available, diamond (j Diamond up to 2000 W/mK). 9 Two methods exist for forming GaN-on-Diamond: Direct GaN-on-diamond epitaxy or transferring pre-grown GaN. Although encouraging transistor performance has been achieved by AlGaN/GaN HEMTs grown epitaxially on single crystal CVD diamond substrates, 9,10 this approach is currently uneconomical due to the unavailability of large single crystal diamond substrates.…”

mentioning

confidence: 99%

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Pomeroy

Bernardoni

Dumka³

et al. 2014

Appl. Phys. Lett.

152

105

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“…Conventional methods use heat spreaders which are few microns away from the heat source. 27 Moreover, because of the low thermal resistivity of GaN, it alleviates the effect of the high thermal resistivity of AlGaN barrier layer on the device thermal characteristics. 28 Our approach is also compatible and can be used in combination with the conventional techniques such as using highly thermally conductive substrates and employing heat spreading layers.…”

mentioning

confidence: 99%

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Asubar

Yatabe

Hashizume

2014

Applied Physics Letters

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Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I-D-V-DS curves at high V-DS regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of similar to 350K and power dissipation of similar to 9W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature

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AlGaN/GaN HEMT on Diamond Technology Demonstration

Cited by 48 publications

References 11 publications

Comparison of GaN HEMTs on Diamond and SiC Substrates

Comparison of GaN HEMTs on Diamond and SiC Substrates

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

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