Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Abstract

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Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

“…GaN-on-diamond wafers have been made in diameters up to 100 mm, suitable for commercial wafer processing [2]. Excellent electrical and thermal performance has already been demonstrated for RF transistors on GaN-on-diamond wafers [3,4], and 3× higher power densities have been obtained with respect to GaN-on-SiC devices [5]. However, an effective thermal boundary resistance (TBR eff ), including contributions from crystalline defects close to interfaces and low thermal conductivity interfacial layers, contributes to the total device thermal resistance in any heteroepitaxial GaN device.…”

“…In GaN-on-SiC the TBR eff can account for up to 20-30% of the total transistor thermal resistance [6]. Similarly, a TBR eff exists at the GaN/diamond interface, associated with the dielectric layer and diamond nucleation layer [4,7]. TBR eff must be minimized in order to gain the full benefit of high thermal conductivity diamond substrates and therefore measurement of this parameter is needed.…”

“…Existing TBR eff measurement techniques are either destructive or require long feedback times. For example, time domain thermoreflectance (TDTR) requires the sample to be coated with a metal transducer [7], whereas Raman thermography requires device fabrication [4,6]. In this letter, we demonstrate a rapid, contactless laser reflectance technique for mapping the GaN-on-diamond TBR eff on as-grown wafers prior to device fabrication.…”

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

“…This has made it possible to triple the maximum possible power density that these microwave devices can deliver. [4][5][6] The active AlGaN/GaN part of the device used in this technology originates from a qualified epitaxy, as for example grown on Si substrates. Diamond is then used to replace the original substrate, either by diamond growth or by wafer-bonding.…”

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

“…Diamond is an outstanding semiconductor for high-power and high-frequency electronic applications due to the exceptional properties, such as wide bandgap, high breakdown electric field, outstanding thermal conductivity, and high carrier mobility. [1][2][3] Recently, encouraging progress, such as high cut-off frequency, has been achieved in diamond field-effect transistors (FETs) by using two-dimensional hole gas based on the ptype hydrogenated-terminated diamond surface. [4][5][6][7][8][9] Among the diamond FETs, metal-oxidesemiconductor FETs (MOSFETs) have been attracting growing interest because of the higher power handling capability.…”