2009 IEEE 10th Annual Wireless and Microwave Technology Conference 2009
DOI: 10.1109/wamicon.2009.5207307
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AlGaN/GaN HEMT temperature-dependent large-signal model thermal circuit extraction with verification through advanced thermal imaging

Abstract: Investigation has been done on procedure, development and verification of a large-signal, temperature-dependent model for Aluminum-GalliumNitride/Gallium-Nitride (AlGaN-GaN) High-ElectronMobility Transistors (HEMTs). Procedural issues have been designed to investigate model selection based on application and operation over varying bias.Theoretical and experimental analysis has been completed on device operating point selection in measurement and modeling to account for thermal coefficient extraction and RF dis… Show more

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Cited by 6 publications
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“…As GaN HEMTs were initially introduced for RF applications before being adopted in the power electronics field, a vast majority of device models for GaN HEMTs were designed for RF applications [89,90,91,92,93] rather than power electronics applications. RF models focus mainly on parameters like gain and s-parameters which are not relevant parameters for power electronics applications.…”
Section: 63: Review Of Existing Gan Transistor Modelsmentioning
confidence: 99%
“…As GaN HEMTs were initially introduced for RF applications before being adopted in the power electronics field, a vast majority of device models for GaN HEMTs were designed for RF applications [89,90,91,92,93] rather than power electronics applications. RF models focus mainly on parameters like gain and s-parameters which are not relevant parameters for power electronics applications.…”
Section: 63: Review Of Existing Gan Transistor Modelsmentioning
confidence: 99%