Modeling GaN: Powerful but Challenging

Dunleavy, L.P.; Baylis, Charles; Curtice, W.R.; Connick, R.

doi:10.1109/mmm.2010.937735

Cited by 87 publications

(46 citation statements)

References 26 publications

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“…There have been excellent overviews of the state of modeling over the years. One recent example is by Dunleavy et al [21]. The intent of this section of this paper is to present one possible solution to the modeling/design problem as applied to the GaN HEMT while acknowledging that there are many other viable solutions.…”

Section: Gan Hemt Large-signal Modelingmentioning

confidence: 99%

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Pengelly

Wood

Milligan

et al. 2012

IEEE Trans. Microwave Theory Techn.

851

311

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Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled with high breakdown voltages, have opened up the possibilities for highly efficient power amplifiers (PAs) exploiting the principles of waveform engineered designs. This paper summarizes the unique advantages of GaN HEMTs compared to other power transistor technologies, with examples of where such features have been exploited. Since RF power densities of GaN HEMTs are many times higher than other technologies, much attention has also been given to thermal management-examples of both commercial "off-the-shelf" packaging as well as custom heat-sinks are described. The very desirable feature of having accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are emphasized with a number of circuit design examples. GaN HEMT technology has been a major enabler for both very broadband high-PAs and very high-efficiency designs. This paper describes examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, Class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing. Index Terms-Broadband, gallium nitride (GaN), high efficiency, monolithic microwave integrated circuit (MMIC), power amplifier (PAs), power transistor, silicon carbide.

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Section: Gan Hemt Large-signal Modelingmentioning

confidence: 99%

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Pengelly

Wood

Milligan

et al. 2012

IEEE Trans. Microwave Theory Techn.

851

311

View full text Add to dashboard Cite

show abstract

“…The agreement is rather good, demonstrating the evolution of the technology and the good accuracy of the model library. In particular, the provided foundry model is based on a Eesof GaAs HEMT model, well suited to GaN HEMT devices modeling [25]. The measured output power exceeds 37 dBm, with a gain of 10 dB and saturated efficiency of 45%.…”

Section: Efficiency(%)mentioning

confidence: 99%

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

2014

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This paper presents the progress of monolithic technology for microwave application, focusing on gallium nitride technology advances in the realization of integrated power amplifiers. Three design examples, developed for microwave backhaul radios, are shown. The first design is a 7 GHz Doherty developed with a research foundry, while the second and the third are a 7 GHz Doherty and a 7-15 GHz dual-band combined power amplifiers, both based on a commercial foundry process. The employed architectures, the main design steps and the pros and cons of using gallium nitride technology are highlighted. The measured performance demonstrates the potentialities of the employed technology, and the progress in the accuracy, reliability and performance of the process.

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“…This can be usually achieved by executing the current acquisitions at peaks of simultaneous gate and drain narrow voltage pulses belonging to a periodic and low-duty cycle excitation. Typical pulse widths and duty cycles, adopted for GaAs-and GaN-based FETs, are below and 1%, respectively [1]. However, as known in literature [2]- [4], the time constants associated with charge trapping effects in GaN FETs seem to show an asymmetry between charge capture (fast, in the order of a few ns) and release (much slower than typical pulse widths).…”

Section: Introductionmentioning

confidence: 98%

A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

Santarelli

Cignani

Gibiino

et al. 2014

IEEE Microw. Wireless Compon. Lett.

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Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.Index Terms-Electrothermal effects, energy states, field effect transistors (FETs), gallium nitride, pulse measurements.

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Modeling GaN: Powerful but Challenging

Cited by 87 publications

References 26 publications

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

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