AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Boulay, S.; Touati, S.; Sar, A.A.; Hoel, Virginie; Gaquière, C.; Jaeger, J.C. de; Joblot, S.; Cordier, Y.; Sèmond, F.; Massies, J.

doi:10.1109/ted.2007.907189

Cited by 15 publications

(8 citation statements)

References 15 publications

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“…10,11 Different orientations of Si were studied for GaN HEMT by various research groups to investigate efficient power device platforms. Boulay et al 12 demonstrated GaN HEMTs on (001) oriented Si substrate for microwave power application. The Si (001) possess four-fold symmetry that is suitable for growth of cubic phase but the Si (111) provides a hexagonal symmetry surface which is more suitable for epitaxial growth of wurtzite phase.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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“…Furthermore, this new way is compatible with the Silicon technology for circuit fabrication. Compared to previous results [4], the improvement is due to better epitaxial layer structure on Si (001) combined with optimized technological processing steps using a Field Plate.…”

Section: Pulsed Measurementsmentioning

confidence: 62%

“…The epitaxial structure consists of a 1.2µm thick of AlN/GaN stress accommodation layer, a 0.8µm thick of GaN buffer, a 1nm thick of AlN spacer layer to improve the carrier confinement in the 2D electron gas [8], a 25nm thick of Al 0.24 Ga 0.76 N barrier and 1nm thick of unintentionally doped GaN cap layer. In comparison with the first results published [4] the threading dislocation density has been divided by a factor 2 and is estimated at 1×10 10 cm -2 by plane-view TEM (Transmission Electronic Microscopy) [5]. This improvement is mainly due to the optimization of the AlN/GaN stress accommodation layer.…”

Section: Materials Growthmentioning

confidence: 98%

“…Nowadays, there is also a challenge to fabricate devices on Si (001) orientation substrate to reduce more and more the material cost and to be compatible with Silicon technology. Recently, devices fabricated on Si (001) substrate with 100nm Si 3 N 4 ī gate technology have demonstrated a microwave power performance of 1W/mm at 2.15GHz [4]. This performance can be enhanced by improving material quality [5] as well as device technology, as reported by Palacios with associated to Ge-spacer technology [6].…”

Section: Introductionmentioning

confidence: 95%

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Performance of Unstuck ¿ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

Gerbedoen¹,

Soltani²,

Defrance³

et al. 2008

2008 European Microwave Integrated Circuit Conference

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This paper shows the capability of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on (001) oriented silicon substrate with 300nm gate length using unstuck ī gate for low cost device microwave power applications. The total gate periphery of 300µm, exhibits a maximum DC drain current density of 600mA/mm at V DS =7V with an extrinsic transconductance (g m max ) around 200mS/mm. An extrinsic current gain cutoff frequency (f T ) of 37GHz and a maximum oscillation frequency (f max ) of 55GHz are deduced from S ij -parameters measurements. At 10GHz, an output power density of 2.9W/mm associated to a power added efficiency (PAE) of 20% and a linear gain of 7dB are obtained at V DS =30V and V GS =-2V.

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“…AIGaN/GaN high mobility transistor (HEMT) is a promising candidate for replacing traditional devices in high-frequency, high-power, and high-temperature electronic devices owing to the fact that AIGaN/GaN HEMT has high sheet carrier density, high breakdown voltage, and high saturation current [1][2][3][4]. Moreover, the current-gain cutoff frequency fT of AIGaN/GaN HEMTs is much higher than that of the conventional devices due to its excellent carrier transport properties.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT

Zhang

Huang

Liu

et al. 2015

2015 China Semiconductor Technology International Conference

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n order to obtain better high frequency performance for GaN-based devices, we investigate the influence of the gate length Lg, the gate-source space Lgs, the gate-drain space Lgd, and the thickness of barrier AIGaN on frequency performance of AIGaN/GaN high electron mobility transistors (HEMTs) using silvaco TCAD simulation. Besides, the importance of Ohmic contact resistance Rc to current-gain cutoff frequency fT is also presented by our simulation. [t presents that the fT increases dramatically with the decrease of Lg and Rc while Lgd and Lgs affect fT lightly. Meanwhile, the optimized thickness of AIGaN barrier layer is obtained in our structure.

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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Cited by 15 publications

References 15 publications

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Performance of Unstuck ¿ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT

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