AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications

Kao, Ming-Yih; Lee, C.; Hajji, R.; Saunier, P.; Tserng, H.Q.

doi:10.1109/mwsym.2007.379979

Cited by 18 publications

(8 citation statements)

References 3 publications

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“…Using the same material structure and slightly modified channel (1.7 µm SD spacing and 0.2 µm field-plate gate) we have demonstrated very good 35 GHz performances [3]. A 4 x 50 µm devices had 4.5 W/mm output power with 6.7 dB gain and 51% PAE at 20 V bias.…”

Section: -35 Ghz Performances and 2 To 26 Ghz Noise Figurementioning

confidence: 88%

Progress in GaN devices performances and reliability

Saunier¹,

Lee²,

Jiménez³

et al. 2008

SPIE Proceedings

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With the DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract, TriQuint Semiconductor and its partners, BAE Systems, Lockheed Martin, IQE-RF, II-VI, Nitronex, M.I.T., and R.P.I. are achieving great progress towards the overall goal of making Gallium Nitride a revolutionary RF technology ready to be inserted in defense and commercial applications. Performance and reliability are two critical components of success (along with cost and manufacturability). In this paper we will discuss these two aspects. Our emphasis is now operation at 40 V bias voltage (we had been working at 28 V). 1250 µm devices have power densities in the 6 to 9 W/mm with associated efficiencies in the low-to mid 60 % and associated gain in the 12 to 12.5 dB at 10 GHz. We are using a dual field-plate structure to optimize these performances. Very good performances have also been achieved at 18 GHz with 400 µm devices. Excellent progress has been made in reliability. Our preliminary DC and RF reliability tests at 40 V indicate a MTTF of 1E6hrs with1.3 eV activation energy at 150 0 C channel temperature. Jesus Del Alamo at MIT has greatly refined our initial findings leading to a strain related theory of degradation that is driven by electric fields. Degradation can occur on the drain edge of the gate due to excessive strain given by inverse piezoelectric effect.

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Section: -35 Ghz Performances and 2 To 26 Ghz Noise Figurementioning

confidence: 88%

Progress in GaN devices performances and reliability

Saunier¹,

Lee²,

Jiménez³

et al. 2008

SPIE Proceedings

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“…After the selective removal of the silicon nitride in the gate foot region, the Al 2 O 3 layer was intentionally exposed to the CF 4 plasma for 8 min. A T-shaped gate electrode was patterned through the e-beam lithography process using a PMMA/Co-polymer/PMMA tri-layer resist system [8]- [10]. Finally, the gate electrodes were formed by depositing Ni/Au metals.…”

Section: Methodsmentioning

confidence: 99%

“…In particular, a AlGaN/GaN heterostructure field effect transistor (HFET) with a high two-dimensional electron gas carrier concentration has exhibited a high operation voltage and high output power density at high frequency, enabling the chip size to be reduced. Ever since the device fabrication and characteristics of an HFET based on an AlGaN/GaN heterojunction were first reported [1]- [8], an AlGaN/GaN HFET has been a promising device for high-frequency applications in commercial and military fields. In general, two different types of gate electrodes, Schottky contact or metal-insulator-semiconductor structured electrodes, have been investigated for an AlGaN/GaN HFET [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Ahn¹,

Kim²,

Kang³

et al. 2016

ETRI J

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This paper demonstrates the effect of fluoride-based plasma treatment on the performance of Al 2 O 3 /AlGaN/ GaN metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of 0.20 μm. For the fabrication of the MISHFET, an Al 2 O 3 layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using CF 4 plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the Al 2 O 3 gate dielectric layer to the plasma environment. The thickness of the Al 2 O 3 gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

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“…Am aximum junction temperature of 2508Cs uperior to conventional devices is currently considered for industrial GaN devices, e. g., [ 6].H owever, such temperature levels also critically reduce gain and PA E. As explained in [3],the low-DC power operation and low quiescent current are required for highgain mm-wave operation, which poses requirements on the evolution of the gain as afunction of drain current, e. g.,inthe transconductance characteristics.T he optimized mm-wave GaN HEMTs will be used in deep class-A/B operation with low quiescent current at drain current levels of I Dmax /20 and lower. Am aximum junction temperature of 2508Cs uperior to conventional devices is currently considered for industrial GaN devices, e. g., [ 6].H owever, such temperature levels also critically reduce gain and PA E. As explained in [3],the low-DC power operation and low quiescent current are required for highgain mm-wave operation, which poses requirements on the evolution of the gain as afunction of drain current, e. g.,inthe transconductance characteristics.T he optimized mm-wave GaN HEMTs will be used in deep class-A/B operation with low quiescent current at drain current levels of I Dmax /20 and lower.…”

Section: Efficiency Enhancementsmentioning

confidence: 99%

“…Theh igh-power amplifier is al imiting factor in alot of those systems.AlGaN/GaN heterostructurebased high electron mobility transistors (HEMTs) offer excellent electronic properties for next generation solidstate microwave power amplifiers in the mm-wave [1,2,3] up to 110 GHz making this technology suitable for telecommunication, multimedia, defense,a nd satellite communication applications.T he major development activities are currently located in the USA, with alarge military force behind it. Theh igh-power amplifier is al imiting factor in alot of those systems.AlGaN/GaN heterostructurebased high electron mobility transistors (HEMTs) offer excellent electronic properties for next generation solidstate microwave power amplifiers in the mm-wave [1,2,3] up to 110 GHz making this technology suitable for telecommunication, multimedia, defense,a nd satellite communication applications.T he major development activities are currently located in the USA, with alarge military force behind it.…”

Section: Introductionmentioning

confidence: 99%

Gallium Nitride MMICs for mm-Wave Power Operation

Quay¹,

Maroldt²,

Haupt³

et al. 2009

Frequenz

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Inthis paper aGallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm-and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measured output power of several dual-stage GaN HPAMMICs amounts to 33 -34dBm at 27 -28GHz with areproducible measured small-signal gain of 10 dB. Optimized GaN test structures matched to 27 GHz provide amaximumP AE of 28 %with an associate output power of 2W/mm at 27 GHz in cw-operation. In pulsed operation with 10 %duty-cycle, aPAE level of >35 %isachieved with apower density of 4.5 W/mm, again at 27 GHz. GaN HEMT MMICsat60GHz provide gain levels of >6dBper amplifier stage, while a MMIC at 101 GHz reaches 3.2 dB of gain.

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AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications

Cited by 18 publications

References 3 publications

Progress in GaN devices performances and reliability

Progress in GaN devices performances and reliability

Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Gallium Nitride MMICs for mm-Wave Power Operation

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