AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Cordier, Y.; Portail, Marc; Chenot, Sébastien; Tottereau, O.; Zieliński, Marcin; Chassagne, Thierry

doi:10.1016/j.jcrysgro.2008.07.063

Cited by 47 publications

(22 citation statements)

References 29 publications

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“…Some triangular features can also be observed in Fig. 8d, characteristic of (111) orientation, which is rather similar to the morphology obtained after CVD growth of 3C-SiC on Si (111) [3]. All these results suggest that some epitaxial growth successfully occurred in area 3 with the correlative increase of surface roughness.…”

Section: Results From Vls Growth Under Configurationsupporting

confidence: 81%

“…On the other hand, a 3C-SiC layer grown on Si(111) can act as an effective accommodation layer for further GaN(0001) growth in order to reduce both lattice and thermal mismatch [3]. This approach is recently attracting attention for highpower and optoelectronic applications due to the various correlated benefits, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…This approach is recently attracting attention for highpower and optoelectronic applications due to the various correlated benefits, i.e. low cost, large area and conductive substrate [3].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Berckmans¹,

Auvray²,

Ferro³

et al. 2012

Journal of Crystal Growth

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Section: Results From Vls Growth Under Configurationsupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Berckmans¹,

Auvray²,

Ferro³

et al. 2012

Journal of Crystal Growth

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“…This equation set (27) to (30), 26 was solved numerically using parameters of deposition from Ref. [141].…”

Section: Void Formationmentioning

confidence: 99%

“…The SiC/Si heterostructure could be used as a material for sensors, 1-4 micromechanical systems, 5-11 electronic devices, [12][13][14][15][16] nanoelectronic devices [17][18][19][20] and photonic structures. 21 application area is the implementation of SiC-Si pseudosubstrates for the III-nitride epitaxy, [25][26][27][28][29] diamond epitaxy, 30 31 graphene formation [32][33] and in advanced silicon technology. 34 35 All these applications require a sorrow control of the SiC nucleation and growth on silicon carbide substrates to achieve a required interface, residual stress, crystalline quality and morphology.…”

Section: Introductionmentioning

confidence: 99%

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Pezoldt¹,

Kulikov²,

Kharlamov³

et al. 2012

Jnl of Comp & Theo Nano

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The main obstacle of implementing numerical simulations for the prediction of nucleation and epitaxial growth is the variety of physical processes with a considerable difference in time and spatial scales. During the growth of nanostructures and epitaxy deposition of atoms, surface and bulk diffusion, nucleation of two-dimensional and three-dimensional clusters, transitions from two dimensional to three dimensional growth, stress relaxation occur. Thus, it is challenging to describe all of them in the framework of a single physical model. In the present work a multi-scale simulation of the epitaxial growth of silicon carbide nanostructures on silicon using three numerical methods, namely Molecular Dynamics, kinetic Monte Carlo, and the Rate Equations was implemented. Molecular Dynamics was used for the estimation of kinetic parameters of atoms and stress fields at the surface, which are input parameters for the other simulation methods. Kinetic Monte Carlo simulations allowed investigating basic nucleation processes and the transition from two dimensional nucleation to three dimensional cluster growth as well as the ordering of nanoclusters. Furthermore the influence of impurities on the nucleation of nanoscale SiC was studied. The energy barriers values obtained in Molecular Dynamics and the physical model used in the rate equation simulations was validated by Kinetic Monte Carlo. The Rate Equation simulation allowed studying the growth process at larger time scales taking into account the surface stress fields. As a result, a full time scale description spanning over a large substrate area of the morphological and structural surface evolution during SiC formation on Si was developed.

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Crack‐free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

Fang

Katagiri

Miyake

et al. 2014

Physica Status Solidi (a)

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With 100-nm-thick 3C-SiC intermediate layer, GaN layer of relative high quality was obtained on Si substrate by using a maskless epitaxial lateral overgrowth (ELO). The threedimensional growth of maskless ELO process was investigated with wafer reflectance collected during growth. Low temperature cathodoluminescence observation confirmed the improvement of the GaN quality by ELO. An AlN interlayer was used to prevent crack of the GaN epilayer. As a result, the as-grown GaN layer shows a crack-free surface with long atomic steps. The threading dislocation density is lower than 1 Â 10 9 cm À2 in GaN layer underneath AlN interlayer.

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AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Cited by 47 publications

References 29 publications

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Investigation of 3C-SiC growth on Si(111) by vapor–liquid–solid transport using a SiGe liquid phase

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Crack‐free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

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