Raman spectroscopy of a single 40 nm 3C‐SiC nanowire (NW) has been achieved at room temperature with the use of surface‐enhanced Raman scattering (SERS). The structure used to enhance the Raman scattering process is based on a tungsten tip covered by a thin gold layer; a NW is attached to the apex of this tip. The specific dimensions of the SiC NWs (diameters are a few tens of nanometers and lengths are a few micrometers) allow us to study several parts of an individual NW according to the lateral resolution of the Raman microspectrometer. High‐resolution transmission electron microscopy (HRTEM) images show both atomic arrangements in the SiC NWs with growth predominantly in the [111] direction and abundant structural defects. Effort has been focused on the correlation between the Raman spectroscopic profiles and the structural deformations. The Fano interference features of the sharp phonon lines have been used to evaluate the free carrier concentration.

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.

We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.25 - 1.6 μm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

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