AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Liu, Xinke; Wang, Yu; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Seung-Hee; Chen, Heng; Tan, Leng Seow

doi:10.1038/srep14092

Cited by 18 publications

(7 citation statements)

References 41 publications

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“…The similar dependencies were observed in AlGaN HEMTs and explained by that at high V GS , i.e. high carrier concentration in gated region, the R ds becomes negligible compared to R [20,21]. We assume that there is no significant effect of inducing the carriers into the conduction band minimum caused by lowering the quasi-Fermi level down to conduction band at high gate voltages [22].…”

Section: Resultssupporting

confidence: 75%

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Rodrigues

Vorobiev

2022

IEEE Trans. Electron Devices

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Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks and found that the peak velocity and corresponding field decrease significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm 2 /Vs and 1.2×10 6 cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7×10 7 cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low-and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. Analysis indicates that the low-field carrier transport is governed by screening of the Coulomb potential of ionized impurities responsible for the carrier scattering. The velocity overshoot is associated with the electron quantization and subband formation caused by the transverse field. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.

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Section: Resultssupporting

confidence: 75%

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Rodrigues

Vorobiev

2022

IEEE Trans. Electron Devices

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“…The similar dependencies were observed in AlGaN HEMTs and explained by that at high V GS , i.e. high carrier concentration in gated region, the R ds becomes negligible compared to R [15], [16]. We assume that the low-field mobility is not degraded with the gate voltage.…”

Section: Index Terms-ingaas/inp Hemt Low-field Mobility Highfield Velocity Geometrical Magnetoresistance Charge Carrier Transportsupporting

confidence: 80%

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

Rodrigues¹,

Vorobiev²

2021

Preprint

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<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm<sup>2</sup>/Vs and 1.2x10<sup>6</sup> cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10<sup>7</sup> cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

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“…Wide band-gap GaN and related ternary III-N semiconductor compounds have been recognized to be among the most important semiconductors for electronic [1,2] and optoelectronic devices [3][4][5] due to their remarkable optical, electrical and physical properties [1,5]. Nevertheless, the commercialization of GaN-based devices is hampered by the limitation of substrate availability.…”

Section: Introductionmentioning

confidence: 99%

Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy

Mulyo

Konno

Nilsen

et al. 2017

Journal of Crystal Growth

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We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N 2 flow rate on the structural and optical properties are studied. At optimum growth conditions, GaN nanocolumns are vertically aligned and well separated with an average diameter, height and density of 72 nm, 1.2 μm and 1.6 × 10 9 cm −2, respectively. The nanocolumns exhibit wurtzite crystal structure with no threading dislocations, stacking faults or twinning and grow in the [0 0 0 1] direction. At the interface adjacent to the glass, there is a few atom layers thick intermediate phase with ABC stacking order (zinc blende). Photoluminescence measurements evidence intense and narrow excitonic emissions, along with the absence of any defect-related zinc blende and yellow luminescence emission.

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Cited by 18 publications

References 41 publications

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy

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