AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

Wu, Tsu Yi; Hu, Cheng Chao; Sze, Po-Wen; Huang, Tong Jyun; Adriyanto, Feri; Wu, Chin-Shan; Wang, Yeong-Her

doi:10.1016/j.sse.2013.01.020

Cited by 8 publications

(8 citation statements)

References 25 publications

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“…(A) (B) Table 3 shows the experimentally available results of AlGaN (AlInN)-based MOSHEMTs from different literatures. 11,[29][30][31][32][33] These experimental data indicate that the AlInN-based MOSHEMT shows better performance with short gate length as compared with AlGaN-based MOSHEMT. To validate our model, the analytical results listed in Table 2 are compared with the experimental results in Table 3 and found that the proposed model results are consistent with the available experimental data.…”

Section: Resultsmentioning

confidence: 99%

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Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

Amarnath

Panda

Lenka

2018

Int J Numerical Modelling

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In this paper, direct current (DC) and microwave characteristics are modeled and analyzed for AlInN(AlGaN)/AlN/GaN metal-oxide-semiconductor high electron mobility transistors with different gate lengths. The 2-dimensional electron gas sheet charge density (n s ) model is developed by considering polarization effect and flat-band voltage with lowest occupied energy level (E 0 ) in the quantum well.The drain current, transconductance, and gate charge model is developed by incorporating approximation of n s as proposed in this paper. Then, the cut-off frequency is calculated from the transconductance and gate capacitance model. The analytical model results are in good agreement with Technology Computer Aided Design simulation and experimental results from literatures for DC and microwave characteristics for the proposed gate lengths (0.1, 0.2, and 0.3 μm). From these characteristics, it is also observed that AlInN/AlN/GaN MOSHEMT shows superior DC and radio frequency performance as compared with AlGaN/ AlN/GaN MOSHEMT. AlInN/AlN/GaN MOSHEMT produces high drain current (2.34 A/mm) and high cut-off frequency (124 GHz) at smaller gate length.

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Section: Resultsmentioning

confidence: 99%

“…Finally, it is concluded that high Al content of the AlInN barrier MOSHEMT device with considerable small gate length shows better performance and suitability for RF and microwave applications. AlGaN-based MOSHEMT 0.5 [29] 0.488 130 --51.3 0.25 [30] 0.9 240 --63 0.16 [31] 0.54 237.…”

Section: Discussionmentioning

confidence: 99%

Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

Amarnath

Panda

Lenka

2018

Int J Numerical Modelling

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“…Thus, there have been intense studies of insulator performance on GaN. A few desired properties of insulators include high dielectric constants, 3 large conduction and valence band offsets to the semiconductor, 4 high crystallization temperature, low interface trap densities at the insulator/semiconductor interface and others. A high dielectric constant insulator is desired to maintain maximum channel control, increase AC transconductance, 5 and minimize threshold voltage shift.…”

Section: Introductionmentioning

confidence: 99%

“…A high dielectric constant insulator is desired to maintain maximum channel control, increase AC transconductance, 5 and minimize threshold voltage shift. 3 TiO 2 is attractive due to its high reported dielectric constant in the range of 60-120; [6][7][8] however, it suffers from high leakage current and low crystallization temperature of 370 C. 9 A method to improve these values while maintaining a high dielectric constant is by forming a ternary compound such as Ti-Al-O or Ti-Hf-O. [10][11][12] By creating these ternary compounds, adequate trade-offs with these factors can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

Colon

Stan

Divan

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This article investigates high dielectric constant gate insulators for GaN-based devices. Exploiting TiO 2 as a high-j insulator typically compromises leakage current and temperature stability of the film. In this work, the authors compare TiO 2 mixed with either Al 2 O 3 or HfO 2 to form composite films Ti-Al-O and Ti-Hf-O, respectively, deposited by atomic layer deposition on both AlGaN/GaN and InAlN/GaN substrates. The authors investigated the compositional effects of the ternary compounds by varying the Al or Hf concentration, and the authors find that leakage current is reduced with increasing Al or Hf content in the film; with a maximum Al-content of 45%, leakage current is suppressed by about 2 orders of magnitude while for a maximum Hf-content of 31%, the leakage current is suppressed by more than 2 orders of magnitude compared to the reference TiO 2 sample. Although the dielectric constant is reduced with increasing Al or Hf content, it is maintaining a high value down to 49, within the investigated compositional range. The crystallization temperature of the insulators was also studied and the authors found that the crystallization temperature depends on both composition and the content. For a Ti-Al-O film with Al concentration of 45%, the crystallization temperature was increased upward of 600 C, much larger compared to that of the reference TiO 2 film. The interface trap densities of the various insulators were also studied on both AlGaN/GaN and InAlN substrates. The authors found a minimal trap density of 2:2 Â 10 12 eV À1 cm À2 for the Ti-Hf-O compound with 35% Hf. In conclusion, our study reveals that the desired high-j properties of TiO 2 can be adequately maintained while improving other insulator performance factors. Moreover, Ti-Hf-O compounds displayed overall better performance than the Ti-Al-O composites.

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“…A major topic of interest is the insulator quality on nitrides. High dielectric constant (j) insulators are preferred to maintain high transconductance and minimize the threshold voltage shift 5 due to the separation of the gate-to-channel distance. However, the bandgaps of insulators typically show inverse relation to dielectric constants, i.e., the larger the j value, the smaller the bandgap.…”

Section: Introductionmentioning

confidence: 99%

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

Colon

Stan

Divan

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO 2 and Al 2 O 3 using different ratios of ALD cycles. TiO 2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO 2. The gate leakage current density decreases with increasing Al content, being $2-3 orders of magnitude lower for a TiO 2 :Al 2 O 3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO 2 and decreases with increasing the number of Al 2 O 3 cycles, it is maintaining a relatively high value compared to an Al 2 O 3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-j properties of TiO 2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices. V

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AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

Cited by 8 publications

References 25 publications

Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths

Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

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