AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents

White, Thomas P.; Shetty, Satish; Ware, Morgan E.; Mantooth, H. Alan; Salamo, Gregory J.

doi:10.1109/jsen.2018.2794264

Cited by 40 publications

(23 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar to the sheet resistance, the mobility varies widely with temperature and decreases by a factor of 20 at 500 K compared to its value at 75 K (see Figure 15). The trend is in agreement with other surveys reported in literature on AlGaN/GaN-based Hall sensors [32,42,[48][49][50]. The estimated values of mobility are used to evaluate the geometrical correction factor.…”

Section: Estimated Mobilitysupporting

confidence: 90%

See 1 more Smart Citation

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two-dimensional electron gas-based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementary metal-oxide semiconductor circuits. Design and fabrication of such Hall sensors and their characterisation over a wide temperature range of 75 to 500 K are reported. The authors experimentally investigate the temperature dependence of the transresistances, sheet resistance and current-related sensitivity (or gain) of such Hall sensors. The current-related sensitivity is shown to be reasonably constant over the complete temperature range and certain inevitable variations in current-related sensitivity can easily be compensated. The temperature dependence of the transresistance can be used for such compensation. The variation of the geometrical correction factor of the Hall sensor with the applied magnetic field strength and the operating temperature is also studied. The authors also demonstrate the possibility of realising Hall sensors with a high geometrical correction factor ( ≈0.97), which is practically insensitive to variations in temperature ( ≃2% from 75 to 500 K) and applied magnetic field, for applications such as in electromechanical devices.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

Section: Estimated Mobilitysupporting

confidence: 90%

“…On sample 2, 30 nm of nickel (Ni) layer followed by 100 nm of gold (Au), is also deposited on top of a Ti/Al metal stack. The four layer metal stack of Ti/Al/ Ni/Au stack is more commonly used for good ohmic contacts to the 2DEG in AlGaN/GaN heterojunctions [25,32,42,50]. -5…”

Section: Metal Depositionmentioning

confidence: 99%

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

show abstract

“…Although the Hall effect is very small in metallic conductors, the effect is enhanced when semi-conductors are used [134]. Indium arsenide (InAs), Gallium arsenide (GaAs) and Aluminium Gallium nitride or Gallium nitride AIGaN/GaN are typical materials used for the construction of Hall effectbased sensors [128], [135].…”

Section: ) Hall-effect Sensormentioning

confidence: 99%

Voltage and Current Measuring Technologies for High Voltage Direct Current Supergrids: A Technology Review Identifying the Options for Protection, Fault Location and Automation Applications

et al. 2020

View full text Add to dashboard Cite

After the occurrence of a DC-side feeder faults on HVDC transmission systems, protection and fault detection systems are anticipated to minimize their onerous effects, by initiating fault-clearing actions such as selective tripping of circuit breakers. Following the successful fault clearance, a subsequent action of significant importance, is the meticulous estimation of its location as a means to accelerate the line restoration, reduce down-time, limit recovery and repair costs, and hence elevate the overall availability and reliability of the transmission system. In order to capture DC-side fault transients for protection and fault location applications, measuring equipment is required to be placed on HVDC installations. This paper focuses primarily on reviewing the available technologies from the perspective of enabling protection, fault location and automation applications in HVDC systems. The review constitutes a mapping of protection and fault location functions, against the available voltage and current measuring technologies, ultimately unlocking insights for selecting measuring equipment based on the desirable characteristics of protection and fault location systems. The review also revealed that the frequency characteristics of each sensing scheme, primarily refers to the bandwidth of the primary sensor, whereas the overall bandwidth of the complete measuring scheme may be further restricted by the secondary converter and corresponding data acquisition system and signal processing electronics. It was also identified that the use of RC voltage dividers has prevailed for voltage measurements for HVDC applications, due to their superior advantages. The choice of a suitable device for current measurement, depends mainly on the fault detection method used and the frequency range it operates. In particular, the review revealed that fault detection and protection methods are mainly concentrated in a frequency spectrum ranging from a few kHz to 100 kHz, while fault location methods require measurements with a frequency range from 100 kHz up to 2 MHz.

show abstract

“…Despite a bulk mobility lower than that of silicon, electrons in this 2DEG have a mobility of up to 2000 cm 2 /Vs, approximately 50% higher than that in silicon [5]. This lends itself to extremely sensitive MAGFETs [6] and Hall devices [7] in GaN that are attractive on account of their compatibility with integrated CMOS drivers for power management ICs in GaN [8].…”

Section: Introductionmentioning

confidence: 99%

An Integrated On-Chip Flux Concentrator for Galvanic Current Sensing

Poluri

Souza

2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents

Cited by 40 publications

References 30 publications

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Voltage and Current Measuring Technologies for High Voltage Direct Current Supergrids: A Technology Review Identifying the Options for Protection, Fault Location and Automation Applications

An Integrated On-Chip Flux Concentrator for Galvanic Current Sensing

Contact Info

Product

Resources

About