AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

“…where φb is the barrier height for gate metal on the dielectric (3.2 eV for Ni on Si3N4), ∆Ec the conduction band offset between Si3N4 and GaN (1.5 eV), φf the conduction band distance from the Fermi-level in GaN (0.2 eV), tox the dielectric thickness (20 nm), εox the permittivity of dielectric (6.6 × 10 −13 F/cm), and ∆Qit the net charge density at the interface (~3.4 × 10 12 cm −2 in this work which is reasonable and reported widely for the III-V group GaN-based materials) [26,27]. The calculated Vth of the VG-HEMT is found to be 3.2 V, which is roughly consistent with the simulation data at 3.1 V. Furthermore, the slight difference of the Vth value between the two devices is mainly caused by the increased drain current and transconductance values in the VG-HEMT considering that the effective vertical gate length is much less than that in the LG-HEMT.…”

“…The proposed VG-HEMT exhibits even a lower drain leakage current owing to a more uniform electric field distribution. Figure 3d gives the performance comparisons with other reported normally-off HEMTs, which clearly indicates the advantage of the proposed scheme by employing a vertical short gate structure [27][28][29][30][31][32][33][34]. In TCAD simulations, Auger recombination, Shockley-Read-Hall (SRH) recombination, and Van Overstraeten-De Man models were used to simulate the device behaviors.…”

RESURF Principle in AlGaN/GaN HEMTs: Accurate 1-D Modeling on Off-State Avalanche Breakdown Behavior via Effective Concentration Profile

“…A typical AlGaN/GaN HEMT is constituted by a stacked structure which from top to bottom is Si 3 N 4 passivation layer, AlGaN barrier layer, GaN channel layer, GaN buffer layer, and substrate [1], [2], [7]- [10]. As shown in Fig.…”

“…The most notable feature of power devices is the ability to block high voltage when operates in off-state [1]- [6]. Due to the polarization-induced free carriers and wide-bandgap that gallium nitride material has, the GaN-based transistor benefits from its excellent electron transport capability and high breakdown voltage making it favorable in the power semiconductor realm [1]- [4], [7]. Much effort has been devoted to the developing of new device structures to meet the unceasing demand for reducing the On-Resistance (Ron) and keeping a high breakdown voltage (BV) [7]- [10].…”

“…Much effort has been devoted to the developing of new device structures to meet the unceasing demand for reducing the On-Resistance (Ron) and keeping a high breakdown voltage (BV) [7]- [10]. Among them, the most direct method is to introduce the preexisting techniques that originally applied to silicon-based power devices into the AlGaN/GaN High Electron Mobility Transistors (HEMTs) [1]- [3], [11]. By using the carefully designed structure parameters, these techniques enable power devices to achieve a better off-state characteristic via reshaping the electric field [5]- [6], [12]- [14].…”